Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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UENOYAMA Takeshi
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Kamiyama Satoshi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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Adachi Hideto
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Kidoguchi Isao
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Uenoyama Takeshi
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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KIDOGUCHI Isao
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
関連論文
- Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane
- First-Principles Calculation of Effective Mass Parameters of Gallium Nitride
- High-resolution RBS analysis of Si-dielectrics interfaces
- Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers
- Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser
- Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory
- High-Power 650-nm-Band AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl_2/N_2 Mixture
- Reduction of Aspect Ratio in 650 nm-Band Self-Sustained-Pulsing Lasers with Saturable-Absorbing Layer
- Extremely Low Astigmatism and Aspect Ratio in 650nm-Band Self-Pulsing AlGaInP Lasers with Strained-Quantum-Well Saturable-Absorbing Layer
- 650nm-Band High Power AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl_2/N_2 Mixture
- Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
- Strain Effect on 630 nm GaInP/AlGaInP Multi-Quantum Well Lasers
- Effect of Crystal Symmetry on Electronic Structures of CuInSe_2 and Related Compounds
- Adsorption and Dissociation Mechanism of Excited N_2 on ZnSe Surface
- Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO2 Gate Dielectrics
- Improvement of Device Characteristics for TiN Gate p-Type Metal–Insulator–Semiconductor Field-Effect Transistor with Al2O3-Capped HfO2 Dielectrics by Controlling Al2O3 Diffusion Annealing Process
- Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer
- Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
- Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
- Theoretical Study of Momentum Matrix Elements of GaN
- Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers
- Optical Gain Using Three-band Model Taking into Account the Excitonic Effects