Optical Gain Using Three-band Model Taking into Account the Excitonic Effects
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概要
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Excitonic effects of optical gain in quantum welts have been studied theoretically in a three-band model. Taking into account an additional localized level in the energy gap, the optical gain in terms of the population inversion between the localized state and one of the band-edge subband states is observed with the very small carrier concentration. Simultaneously, the excitonic absorption is observed due to the band-edge electron-hole interaction. The former optical gain is extremely enhanced by the latter excitonic: effect through the coupling between the two transitions. This enhanced optical gain might show a possibility of fabricating very low threshold current laser diodes.
- 社団法人応用物理学会の論文
- 1995-02-28
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