Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-01
著者
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SUZUKI Masakatsu
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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UENOYAMA Takeshi
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Suzuki Masakatsu
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Uenoyama Takeshi
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
関連論文
- Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane
- First-Principles Calculation of Effective Mass Parameters of Gallium Nitride
- Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers
- Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser
- Strain Effect on 630 nm GaInP/AlGaInP Multi-Quantum Well Lasers
- Effect of Crystal Symmetry on Electronic Structures of CuInSe_2 and Related Compounds
- Adsorption and Dissociation Mechanism of Excited N_2 on ZnSe Surface
- Electronic Structure and Magnetic Properties of Li_2CuO_2
- Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer
- Theoretical Study of Momentum Matrix Elements of GaN
- Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers
- Optical Gain Using Three-band Model Taking into Account the Excitonic Effects