UENOYAMA Takeshi | Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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概要
- UENOYAMA Takeshiの詳細を見る
- 同名の論文著者
- Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.の論文著者
関連著者
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UENOYAMA Takeshi
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Uenoyama Takeshi
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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SUZUKI Masakatsu
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Suzuki Masakatsu
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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UENOYAMA Takeshi
Institute of Laser Engineering,Osaka University
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Uenoyama T
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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KAMIYAMA Satoshi
Semiconductor Leading Edge Technologies, Inc.
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Kamiyama S
Matsushita Electric Ind. Co. Ltd. Osaka Jpn
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Suzuki M
Shizuoka Univ. Hamamatsu
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Suzuki M
Department Of Electronic Engineering Faculty Of Engineering Hokkaido University
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Suzuki Mitsuru
Cryogenic Centre University Of Tokyo
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Suzuki M
Sci. Univ. Tokyo Chiba Jpn
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Suzuki M
Research Center Asahi Glass Co. Ltd.
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Suzuki Mariko
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
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Suzuki M
Research Center Sony Corporation
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OHNAKA Kiyoshi
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Ohnaka K
Matsushita Electric Ind. Co. Ltd. Osaka Jpn
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Suzuki M
Department Of Electronics Graduate School Of Engineering Tohoku University
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WADA Takahiro
Central Research Laboratories Matsushita Electric Industry Co., Ltd.
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NAKAMURA Yoshio
Department of Chemistry, Faculty of Sciece, Konan University
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Nakao Takashi
Av-it Development Group. Sony Corporation
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Kamiyama Satoshi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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MANNOH Masaya
Semiconductor Research Center Matsushita Electric Industrial Co., Ltd.
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Adachi Hideto
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Nakao T
Av-it Development Group. Sony Corporation
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HANDA TAKESHI
Department of Geology and Mineralogy, Graduate School of Science, Kyoto University
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Handa Takeshi
Department Of Geology And Mineralogy Graduate School Of Science Kyoto University
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Handa Takeshi
Department Of Metallurgical Engineering Tokyo Institute Of Technology
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Mannoh Masaya
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Kidoguchi Isao
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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NAKAO Taketoshi
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.,
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Wada Takahiro
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Nakao Taketoshi
Central Reseach Laboratory Matsushita Electric Industrial Co. Ltd.
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Nakamura Yoshio
Department Of Metallurgical Engineering Tokyo Institute Of Technology
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Nakamura Yoshio
Department Od Metallurgical Engineering Tokyo Institute Of Technology
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KIDOGUCHI Isao
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
著作論文
- Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane
- First-Principles Calculation of Effective Mass Parameters of Gallium Nitride
- Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers
- Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser
- Strain Effect on 630 nm GaInP/AlGaInP Multi-Quantum Well Lasers
- Effect of Crystal Symmetry on Electronic Structures of CuInSe_2 and Related Compounds
- Adsorption and Dissociation Mechanism of Excited N_2 on ZnSe Surface
- Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer