Adachi Hideto | Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

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著作論文

Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory
High-Power 650-nm-Band AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl_2/N_2 Mixture
Reduction of Aspect Ratio in 650 nm-Band Self-Sustained-Pulsing Lasers with Saturable-Absorbing Layer
Extremely Low Astigmatism and Aspect Ratio in 650nm-Band Self-Pulsing AlGaInP Lasers with Strained-Quantum-Well Saturable-Absorbing Layer
650nm-Band High Power AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl_2/N_2 Mixture
Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer

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