Kobayashi Y | Matsushita Electric Industrial Co. Ltd. Kyoto Jpn

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概要

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著作論文

Characterization of Diamond Films by Means of a Pulsed Positron Beam
On extended energy-loss fine structure data analysis for obtaining reliable structural parameters
X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment
Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
Self-Separation of a Thick AIN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
Thermodynamic Analysis of Various Types of Hydride Vapor Phase Epitaxy System for High-Speed Growth of InN
In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors
In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
High-Pressure Effects in Si-As-Te Amorphous Chalcogenide Glasses Fabricated under Microgravity Environment
Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
GHz-Band Surface Acoustic Wave Devices Using the Second Leaky Mode on LiTaO_3 and LiNbO_3
1.9-GHz-Band Surface Acoustic Wave Device Using Second Leaky Mode on LiTaO_3
Characteristics of Surface Acoustic Wave on AlN Thin Films
Characteristics of AlN Thin Films Deposited by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering and Their Application to GHz-Band Surface Acoustic Wave Devices
Improvement of Coupling Efficiency for Passive Alignment of Stacked Multifiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
Improvement on Coupling Efficiency for Passive Alignment of Stacked Multi-Fiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory
Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy
New High-Phase-Velocity Leaky Surface Acoustic Wave Mode on LiTaO_3 and LiNbO_3
Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
Prerecorded Signal Characteristics of High-Density Optical Disks

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