Characteristics of Surface Acoustic Wave on AlN Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-05-30
著者
-
USUKI Tatsuro
New Materials Research Center, SANYO Electric Co., Ltd.
-
SHIBATA Kenichi
New Materials Research Center, SANYO Electric Co., Ltd.
-
Takeuchi K
Riken (the Institute Of Physical And Chemical Research)
-
Usuki T
Sanyo Electric Co. Ltd. Osaka Jpn
-
Usuki T
New Materials Research Center Sanyo Electric Co. Ltd.
-
Usuki Tatsuro
New Materials Research Center Sanyo Electric Co. Ltd.
-
Kobayashi Y
Tokai Univ. Kanagawa Jpn
-
Tanaka N
Nagoya Univ. Nagoya Jpn
-
Kobayashi Y
Ntt Basic Research Lab. Kanagawa
-
Kobayashi Y
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
-
Takeuchi K
Greduate School Of Science And Engineering Saitama University:riken (the Institute Of Physical And C
-
Shibata K
New Materials Research Center Sanyo Electric Co. Ltd.
-
Kangawa Yoshihiro
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
-
Kiyama Seiichi
New Materials Research Center Sanyo Electric Co. Ltd.
-
Shibata Kenichi
New Material Research Center Sanyo Electric Co. Ltd.
-
Kobayashi Y
Department Of Nuclear Engineering Graduate School Of Engineering
-
KOBAYASHI Yasumi
New Materials Research Center, SANYO Electric Co., Ltd.
-
TANAKA Naoki
New Materials Research Center, SANYO Electric Co., Ltd.
-
OKANO Hiroshi
New Materials Research Center, SANYO Electric Co., Ltd.
-
Takeuchi Kousuke
New materials Research Center, SANYO Electric Co., Ltd.
-
Okano H
Applied Materials Japan Inc. Chiba Jpn
-
Tanaka N
Applied Physics Department Graduate School Of Engineering Nagoya University
-
Teraishi Kazuo
Department Of Materials And Chemistry Graduate School Of Engineering Tohoku University
関連論文
- Durable Molecular Organic Electroluminescent Devices and Their Frequency Responses to a New Accurate Driving Method(Special Issue on Organic Materials for Optics and Electronics)
- White-Light-Emitting Material for Organic Electroluminescent Devices
- Influence of the Emission Site on the Running Durability of Organic Electroluminescent Devices
- Pyrazoline Dimers for Hole Transport Materials in Organic Electroluminescent Devices
- Novel Europium Complex for Electroluminescent Devices with Sharp Red Emission
- Characterization of Diamond Films by Means of a Pulsed Positron Beam
- Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells : Semiconductors
- Low Threshold Current Density Operation of 1.16μm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate : Optics and Quantum Electronics
- Photoluminescence and Lasing Characteristics of GaInNAs Quantum Wells Using GaInAs Intermediate Layers
- Time-Resolved High-Resolution Electron Microscopy of Surface-Diffusion of Tungsten Atoms on MgO (001) Surfaces
- Homogeneous Growth of Zinc Oxide Whiskers
- Y-Ba-Co-O/Nb Tunnel Type Josephson Junctions
- Electrical Properties of La-Sr-Cu-O/Al Contact
- Photocuring Kinetics for Polyfurfurylmethacrylate Doped with Fullerene:The Influence of Oxygen Partial Pressure on Sensitivity : Atoms, Molecules, and Chemical Physics
- Depth-Profile for the Photo-Curing of the Photo-Oxidation Induced Polycondensation(POP) Resin
- Influence of the Oxygen Partial Pressure on the Photo-Curing of Photo-Oxidation lnduced Polycondensation Resin
- Photo-oxidation Induced Polycondensation Resin(1)
- On extended energy-loss fine structure data analysis for obtaining reliable structural parameters
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
- Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment
- Microwave Dielectric Properties of CaO-Li_2O-Ln_2O_3-TiO_2 Ceramics
- Dielectric Characteristics of (A^_・A^_)TiO_3 Ceramics at Microwave Frequencies : Dielectric Properties
- Preparation and Characteristics of a Superconducting Base Transistor with an Au/Ba_K_xBiO_3/Niobium-Doped SrTiO_3 Structure
- Junction Characteristics of an Au/Ba_K_xBiO_3/Niobium-Doped SrTiO_3 Structure
- Quantum Mechanical Transmission and Reflection of Quasi-Particles at Arbitrary Potential Barriers in the Superconducting Base Transistor
- Fluorine Doping and Superconductivity of Nd_2CuO_4 Thin Films
- Reversible T_c Change in Bi-Sr-Ca-Cu-O Thin Films by UV Photo and Thermal Annealings : High Temperature Superconducting Thin-Films(Solid State Devices and Materials 1)
- Reversible Resistivity Control of Ba_2YCu_3O_ Thin Films by Laser Annealing : Electrical Properties of Condensed Matter
- Preparation of High-T_c Bi-Sr-Ca-Cu-O Superconducting Thin Films by AC Sputtering : Electrical Properties of Condensed Matter
- Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
- Laser Flash Photolysis Studies on the Model System for Photo-Oxidation-Induced Polycondensation Polyimides with Fullerene C_
- Efficient Acetalization of Epoxy Rings on a Fullerene Cage
- New Photosensitive Polyimide System for Sealing High-Density Semiconductor Chip : Atoms, Molecules, and chemical physics
- Polymer Structural Effect on Photosensitivity and Thermal Stability of the Photosensitive Epoxy Resin Using the Photooxidation-induced Polycondensation Mechanism
- Tight-Binding Molecular Dynamics Study of Hydrogen Molecule Inside Silicon Crystal
- Tight-binding Molecular Dynamics Simulation of Desorbed SiO Molecule during the Oxidation of Si(111) Surface
- Quantum Chemical Study on the Interaction of NF3 with Si
- Tight-Binding Molecular Dynamics Simulation of Desorbed SiO Molecule during the Oxidation of Si(111) Surface
- Periodic Boundary Quantum Chemical Study on ZnO Ultra-Violet Laser Emitting Materials
- Periodic Boundary Quantum Chemical Study on ZnO Ultra-Violet Laser Emitting Materials
- Carrier Injection/Transport Characteristics of Photochromic Diarylethene Film : Surfaces, Interfaces, and Films
- Solution Electrochemiluminescent Cell with a High Luminance Using an Ion Conductive Assistant Dopant Optics and Quantum Electronics
- Solution Electrochemiluminescent Cell Using Tris(phenylpyridine) Iridium : Optics and Quantum Electronics
- Self-Separation of a Thick AIN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
- Thermodynamic Analysis of Various Types of Hydride Vapor Phase Epitaxy System for High-Speed Growth of InN
- Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
- Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
- Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
- Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
- Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs
- Inclusion of Strain Effect in Miscibility Gap Calculations for III-V Semiconductors
- High Temperature Characteristics of Nearly 1.2 μm GaInAs/GaAs/AlGaAs Lasers
- High-Pressure Effects in Si-As-Te Amorphous Chalcogenide Glasses Fabricated under Microgravity Environment
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- Highly Accurate CO_2 Gas Sensor Using a Modulation-Type Pyroelectric Infrared Detector
- Modulation Type Pyroelectric IR Detector
- Computational Studies on GaN Surface Polarity and InN/GaN Heterostructures by Density Functional Theory and Molecular Dynamics
- Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics
- GHz-Band Surface Acoustic Wave Devices Using the Second Leaky Mode on LiTaO_3 and LiNbO_3
- 1.9-GHz-Band Surface Acoustic Wave Device Using Second Leaky Mode on LiTaO_3
- Epitaxial AlN Thin Films Grown on α-Al_2O_3 Substrates by ECR Dual Ion Beam Sputtering
- Characteristics of Surface Acoustic Wave on AlN Thin Films
- Preparation of Aluminum Nitride Epitaxial Films by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Characteristics of AlN Thin Films Deposited by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering and Their Application to GHz-Band Surface Acoustic Wave Devices
- Improvement of Coupling Efficiency for Passive Alignment of Stacked Multifiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Improvement on Coupling Efficiency for Passive Alignment of Stacked Multi-Fiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory
- Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
- Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
- Property Control for High-Quality Ba_K_xBiO_3 Epitaxial Thin Films Prepared by High-Pressure Reactive rf-Magnetron Sputtering
- Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy
- Y-BA-CU-O/NB JOSEPHSON TUNNEL-JUNCTIONS
- Chemical Beam Epitaxy Growth and Characterization of GaNAs/GaAs
- GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy
- Chemical Beam Epitaxy Growth and Characterization of Ga(In)NAs/GaAs
- New High-Phase-Velocity Leaky Surface Acoustic Wave Mode on LiTaO_3 and LiNbO_3
- Fabrication and Properties of MgO/Bi_2Sr_2CaCu_2O_x Interfaces Using Crystalline and Amorphous MgO Films Grown by the MBE Method
- Preparation and Characterization of Nb/MgO/Bi_2Sr_2CaCu_2O_x Junctions Using the Cleavage Planes of a Single-Crystal Superconductor
- Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
- Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
- Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
- Prerecorded Signal Characteristics of High-Density Optical Disks
- Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition
- Investigation of the Characteristics of a Piezoelectric Chopper for a Modulation-Type Pyroelectric Infrared Detector
- Oxygen Control in Bi_2Sr_2Ca_1Cu_2O_x Superconducting Thin Films by Activated Oxygens
- Y-BA-CU-O THIN-FILMS BY EVAPORATING THE 3 ELEMENTS USING RESISTIVE HEATING
- Y-Ba-Cu-O/AlO_x/Nb Josephson Tunnel Junctions
- Microwave Dielectric Properties and Crystal Structure of CaO-Li_2O-(1-x)Sm_2O_Ln_2O_3-TiO_2 (Ln: lanthanide) Ceramics System
- GHz-Barud Surface Acoustic Wave Devices Using Aluminum Nitride Thin Films Deposited by Electron Cyclotron Resonance Dual Ion-Beam Sputtering
- Orientation Control of AlN Film by Electron Cyclotron Resonance Ion Beam Sputtering
- Properties of Yb-Ba-Cu-O Superconductors Prepared by a Plasma-Arc Melting and Rapid Quenching Method
- A New-Structure IR Gas Sensor
- Modulation Type Pyroelectric Infrared Sensor Using LiTaO_3 Single Crystal : P: Pyroelectrics
- Characterization of a Natural Barrier in an Au/Ba_K_XBiO_3 Junction
- Epitaxial Growth of Ba_K_xBiO_3 Thin Films by High-Pressure Reactive RF-Magnetron Sputtering
- Preparation of Lateral Isolation Structures by Controlling Bi or Ca Compositions in Bi-System Superconducting Films
- Preparation of T_c=109 K Bi-Sr-Ca-Cu-O Superconducting Thin Films from Amorphous Bi-O/Sr-Ca-Cu-O Structures