High-Pressure Effects in Si-As-Te Amorphous Chalcogenide Glasses Fabricated under Microgravity Environment
スポンサーリンク
概要
著者
-
Endo S
Osaka Univ. Osaka
-
Endo S
Research Center For Materials And Science At Extreme Conditions Osaka University
-
Endo S
Center For Interdisciplinary Research Tohoku University
-
Kobayashi Y
Tokai Univ. Kanagawa Jpn
-
Kobayashi Y
Ntt Basic Research Lab. Kanagawa
-
Kobayashi Y
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
-
Endo S
Osaka Univ. Toyonaka Jpn
-
Kangawa Yoshihiro
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
-
Kobayashi Y
Department Of Nuclear Engineering Graduate School Of Engineering
-
遠藤 三郎
Center For Interdisciplinary Research Tohoku University
関連論文
- Martensitic Transformation in Shape Memory Alloys under Magnetic Field and Hydrostatic Pressure
- Effects of Static Magnetic Field and Hydrostatic Pressure on the Isothermal Martensitic Transformation in an Fe-Ni-Cr Alloy
- Negative Temperature Coefficient of Electrical Resistivity in B2-Type Ti-Ni Alloys
- 4a-PS-12 CuInSe_2のX線光音響分光
- 14p-W-11 CdIn_Cr_S_4 の熱伝導 II
- 5a-M-10 CdIn_2S_4の電気的性質(II)
- カルコパイライト型化合物CuInSe2薄膜の合成とその高効率薄膜太陽電池開発の現状 (特集 21世紀に開花するニューマテリアルとそのテクノロジーへの招待--東京理科大学における先端材料研究)
- 5a-D-6 CuInSe_2のラマン散乱
- 2a-A-13 化合物半導体CdInGaS_4の光吸収温度変化と圧力変化
- 27p-B-4 CdIn_2S_4-In_2S_3系の光物性-I
- 30a-N-6 CdIn_zS_4の磁気抵抗効果(II)
- Characterization of Diamond Films by Means of a Pulsed Positron Beam
- 4a-H-10 CdIn_Cr_S_4の磁気的および電気的性質(I)
- Effect of Magnetic Field and Hydrostatic Pressure on Martensitic Transformation and Its Kinetics
- 大電流放電プラズマ源のためのTiO_2セラミック基板とその特性
- Metallization of Mo-Cluster Compound Ga_Mo_2S_4 at 38 CPa
- Superconducting Behavior of YBa_2Cu_3O_7 under Pressure
- X-ray Absorption Near Edge Structure (XANES) of CuInSe_2, Brass and Phosphor Bronze by Photoacoustic Method : Photoacoustic Spectroscopy
- 1-3-42族カルコパイライト混晶半導体における材料設計法
- 3元カルコパイライト型半導体の物性と応用
- 2a-K-15 層状化合物半導体CdInGaS_4のフォトルミネッセンス
- 27p-B-5 CdIn_2S_4-In_2S_3系の光物性 (II)
- 12a-R-4 CdIn_2S_4のXPSスペクトル
- 10p-R-11 n型CuInSe_2における不純物伝導
- 12p-F-13 Hexagonal NiSの電気的性質 (II)
- Enhancement of the ^1H NMR Relaxation Rate at Low Temperatures and Development of Antiferromagnetic Spin Fluctuations of π-Electrons in Superconducting λ-(BETS)_2GaCl_4(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Enhancement of the ^1H NMR Relaxation Rate at Low Temperatures and Development of Antiferromagnetic Spin Fluctuations of π-Electrons in Superconducting λ-(BETS)_2GaCl_4
- ^Se NMR Evidence for the Development of Antiferromagnetic Spin Fluctuations of π-Electrons in λ-(BETS)_2GaCl_4
- ^Se NMR Evidence for the Development of Antiferromagnetic Spin Fluctuations of π-Electrons in λ-(BETS)_2GaCl_4
- Antiferromagnetic Ordering in the Conducting π-d System κ-(BEDT-TSF)_2FeCl_4 (where BEDT-TSF is Bis (ethylenedithio) tetraselenafulvalene, C_S_4Se_4H_8) : Condensed Matter: Electronic Properties, etc.
- On extended energy-loss fine structure data analysis for obtaining reliable structural parameters
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
- Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment
- Anomalous Splitting of ^1H-NMR Spectra in λ-(BEDT-TSF)_2FeCl_4
- Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
- 31p-LD-11 ZnCr_2Se_4の電気伝導
- Self-Separation of a Thick AIN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
- Thermodynamic Analysis of Various Types of Hydride Vapor Phase Epitaxy System for High-Speed Growth of InN
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
- Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
- Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
- Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
- Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
- Anomalous Dielectric Response in the πp-d Correlated Metallic State of λ-(BEDT-TSF)_2FeCl_4
- Acoustic de Hass-van Alphen Effect in Organic Superconductor α-(BEDT-TTF)_2NH_4Hg(SCN)_4
- Magnetic Quantum Oscillations in In_Ga_As/In_Al_As Multiquantum Well Observed by Millimeter Wave Responce
- Transport Properties in InP/InAlAs Type II Single Heterostructure
- 27a-B-12 CdInGaS_4のC(0001)面からの光電子スペクトル
- High-Pressure Effects in Si-As-Te Amorphous Chalcogenide Glasses Fabricated under Microgravity Environment
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- GHz-Band Surface Acoustic Wave Devices Using the Second Leaky Mode on LiTaO_3 and LiNbO_3
- 1.9-GHz-Band Surface Acoustic Wave Device Using Second Leaky Mode on LiTaO_3
- Characteristics of Surface Acoustic Wave on AlN Thin Films
- Characteristics of AlN Thin Films Deposited by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering and Their Application to GHz-Band Surface Acoustic Wave Devices
- Improvement of Coupling Efficiency for Passive Alignment of Stacked Multifiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Improvement on Coupling Efficiency for Passive Alignment of Stacked Multi-Fiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory
- Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
- Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
- 24pPSA-52 New magnetic poroperties of MnRhAs_xP_system
- Electrical and Optical Properties of CuInSe_2 Single Crystals Prepared by Three-Temperature-Horizontal Bridgman Method
- Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy
- New High-Phase-Velocity Leaky Surface Acoustic Wave Mode on LiTaO_3 and LiNbO_3
- Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
- Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
- Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
- Prerecorded Signal Characteristics of High-Density Optical Disks
- Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition
- Electrical, Optical and Schottky Properties of AgGa(S_Se_x)_2 System
- Crystal Growth of CuInSe_2 by the Method of Horizontal Bridgman with Three Temperature Zones
- Structural and Optical Properties of the Cu_Ag_xGaS_2 System
- Effects of Oxygen Doping on Bulk Properties of CuInSe_2 Crystals
- Thermodynamical Properties of I-III-Vl_2-Group Chalcopyrite Semiconductors
- Study on the Crystal Structure of CdInGaS_4 and Cd_3InGaS_6 by Computer Simulation Method
- Electrical and Optical Properties of the CuGa(S_Se_x)_2 System
- Photoluminescence and Photoconduction in the System (CdIn_2S_4)_-(In_2S_3)_x
- Green Emission in CdS Films Deposited on CdInGaS_4 by Evaporation Method
- Optical Properties of Zn_xCd_InGaS_4 System
- Photothermal Effect in Compound Semiconductors CdInGaS_4 and CdIn_2S_4
- Electrical and Optical Properties of CuInSe_2 Single Crystals with Various Deviations from Stoichiometry
- Hydrostatic Pressure Dependence of the Fundamental Absorption Edges of CdInGaS_4 and ZnIn_2S_4
- Study on the Crystallographic and Photoluminescent Properties of Cd_3InGaS_6. : II. Photoluminescence
- Study on the Crystallographic and Photoluminescent Properties of Cd_3InGaS_6. I. Crystallographic Study
- Green Emission in CdS/CdInGaS_4
- Optical Properties of Cd_3InGaS_6
- On Green Emission in CdInGaS_4
- Fundamental Optical Absorption in Crystals of the CdIn_2S_4-In_2S_3 System : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
- Optical Absorption in CdIn_2S_4
- Effect of Excess Sulphur on the Electrical and Optical Properties of CdIn_2S_4
- On the Electrical and Thermal Properties of the Ternary Chalcogenides A_2^IB^X_3, A^IB^VX_2 and A_3^IB^VX_4 (A^I=Cu; B^=Ge, Sn; B^V=Sb; X=S, Se, Te) : II. Electrical and Thermal Properties of Cu_3SbSe_4
- 3p-TC-9 CdIn_2S_4の磁気抵抗効果(1)
- 5a-M-11 CdIn_2S_4の磁気抵抗効果(III)
- TSEE from Aluminas and Spinels Subjected to Ar^+-Ion Irradiation : Exoemission Associated with Radiation Dosimetry
- Thermally Stimulated Exoelectron Emission of Plasma-Sprayed Zirconia Coatings : Exoemission Associated with Surfaces and Films
- Microstructure of Plasma-Sprayed Yttria-Stabilized Zirconia(Materials, Metallurgy & Weldability)
- ESR Studies on Cd^+ Centers in Alkali-silicate Slag
- 5a-M-12 CdIn_Cr_S_4の熱伝導
- 第5回三元及び多元化合物国際会議