Kangawa Yoshihiro | Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
スポンサーリンク
概要
関連著者
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川添 良幸
東北大 金属材料研
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川添 義幸
東北大金研
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Kobayashi Y
Tokai Univ. Kanagawa Jpn
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KAWAZOE Yoshiyuki
Institute for Materials Research, Tohoku University
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川添 良幸
東北大学金属材料研究所
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川添 良幸
東北大金研
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安原 洋
東北大学金属材料研究所川添研究室
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本郷 研太
ハーバード大学
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安原 洋
東北大金研
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KOUKITU Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Murakami H
Institute For Molecular Science
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小山田 隆行
東北大学金属材料研究所川添研究室
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水関 博志
東北大金研
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水関 博志
東北大学金属材料研究所
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SHIBATA Kenichi
New Materials Research Center, SANYO Electric Co., Ltd.
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本郷 研太
東北大金研
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OHNO Kaoru
Department of Physics, Yokohama National University
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Kumagai Y
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
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田中 雅彦
物材機構
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田中 雅彦
高エネ研
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田中 雅彦
KEK
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宍戸 統悦
東北大金研
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奥 正興
東北大金研
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葉 金花
物質研
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工藤 邦男
神奈川大工
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飯泉 清賢
東京工芸大工
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菅原 孝昌
東北大金研
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中嶋 一雄
東北大金研
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田中 雅彦
物質・材料研究機構
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菅原 孝昌
東北大学金属材料研究所
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奥 正興
東北大・金研
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葉 金花
独立行政法人 物質・材料研究機構 エコマテリアル研究センター
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岡田 繁
国士舘大学理工学部
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USUKI Tatsuro
New Materials Research Center, SANYO Electric Co., Ltd.
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小島 正美
東北工業大学・ライフデザイン学部
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小山田 隆行
東北大金研
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ICHINOSEKI Kyoko
Institute for Materials Research, Tohoku University
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Endo S
Osaka Univ. Osaka
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Endo S
Research Center For Materials And Science At Extreme Conditions Osaka University
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Ohno K
Department Of Physics Yokohama National University
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飯泉 清賢
東京工芸大学工学部応用化学科
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工藤 邦男
神奈川大学工学部応用化学科
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Endo S
Center For Interdisciplinary Research Tohoku University
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Ohno Kaoru
Department Of Physics Faculty Of Engineering Yokohama National University
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Usuki T
Sanyo Electric Co. Ltd. Osaka Jpn
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Usuki T
New Materials Research Center Sanyo Electric Co. Ltd.
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Usuki Tatsuro
New Materials Research Center Sanyo Electric Co. Ltd.
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大町 真一郎
東北大学大学院工学研究科
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大町 真一郎
東北大学 大学院工学研究科
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大石 修治
信州大学工学部環境機能工学科
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福田 承生
東北大学 多元物質科学研究所
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石沢 芳夫
いわき明星大工
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佐原 亮二
東北大金研
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クマール ビジャイ
東北大金研
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野村 明子
東北大金研
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大石 修治
信州大工
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岡田 繁
国士舘大工
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小原 和夫
東北大金研
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古曳 重美
九州工大工
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古曵 重美
九州工大工
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ENDO Shoichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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小原 和夫
東北大学金属材料研究所
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FUKUDA Tsuguo
Institute for Materials Research, Tohoku University
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Yamazaki Tetsuo
Elecltrotechnical Laboratory:(present Address) Institute Of Advanced Energy Kyoto University
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木村 正行
北陸先端科学技術大学院大学
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ISHII Soh
Institute for Materials Research, Tohoku University
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SUZUKI Ryoichi
Electrotechnical Laboratory
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KOBAYASHI Yoshinori
National Chemical Laboratory for Industry
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MIKADO Tomohisa
Electrotechnical Laboratory
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OHGAKI Hideaki
Electrotechnical Laboratory
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CHIWAKI Mitsukuni
Electrotechnical Laboratory
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YAMAZAKI Tetsuo
Electrotechnical Laboratory
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佐原 亮二
東北大学金属材料研究所
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木村 正行
北陸先端科学技術大学院大
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Hamakawa Yoshihiro
Faculty Of Science And Engineering Ritsumeikan University
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CHIWAKI Mitsukuni
Elecltrotechnical Laboratory
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Bae Y‐c
Codec Co. Ltd. Kawasaki Jpn
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Ishii Soh
Institute For Materials Research Tohoku University
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Fukuda T
Gunma Univ. Gunma Jpn
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Fukuda Tsuguo
Institute Of Multidisciplinary Research For Advanced Materials (imram) Tohoku University
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Fukuda Tsuguo
Optoelectronics Joint-research Laboratory
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Fukuda T
National Inst. Advanced Industrial Sci. And Technol. Hokkaido Center Sapporo Jpn
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Ohgaki H
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ohgaki Hideaki
National Institute Of Advanced Industrial Science And Technology
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古曵 重美
九州工業大学工学部
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古曳 重美
九州工業大学工学部
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Suzuki R
National Institute Of Advanced Industrial Science And Technology
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湯葢 邦夫
東北大・金研
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石井 聡
筑波大加速器
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佐々木 淳
Necトーキン(株)
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小島 秀伸
東北大金研
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湯葢 邦夫
東北大金研
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橋本 孝俊
東北大金研
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西松 毅
東北大金研
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池田 義秋
NECトーキン(株)
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湯蓋 邦夫
東北大学金属材料研究所
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Murakami Hisashi
Department of Cardiology, Social Insurance Chukyo Hospital
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Kumar V
Tohoku Univ. Sendai Jpn
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丸山 洋平
東北大金研
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本郷 研太
北陸先端大
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布宮 千夏子
山形県立山形職業能力開発専門校能力開発支援課
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石井 聡
東北大金研
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大野 かおる
横国大(工)
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高橋 まさえ
東北大学金属材料研究所
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斎藤 繁喜
東北大学金属材料研究所
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五十嵐 伸昭
東北大学金属材料研究所計算材料学センター
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Kobayashi Hidehiko
Faculty Of Engineering Yamanashi University
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OKAMOTO Hiroaki
Faculty of Engineering Science, Osaka University
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Nishida T
Ntt Basic Res. Lab. Kanagawa Jpn
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丸山 洋平
旭化成株式会社
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Takeuchi K
Riken (the Institute Of Physical And Chemical Research)
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Kobayashi Michihiro
Faculty of Engineering Science, Osaka University
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KUMAR Vijay
Institute for Materials Research, Tohoku University
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大石 修治
信州大 工
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Matsuo Yuriko
Division Of Fundamental Mechanics Research Institute For Applied Mechanics Kyushu University
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Chen J
School Of Physics State Key Laboratory For Crystal Materials Shandong University
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Kumar Vijay
Institute For Materials Research Tohoku University
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手嶋 勝弥
信州大学工学部環境機能工学科
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Kumar Vijay
東北大金研
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岡田 繁
国士館大工
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澤田 豊
東京工芸大工
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田中 雅彦
物質研
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手嶋 勝弥
信州大工
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工藤 邦夫
神奈川大工
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田中 雄彦
物質研
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戸澤 慎一郎
東北大金研
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田中 雅彦
国士舘大工
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亀頭 直樹
豊橋技科大工
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古曵 重美
九工大工
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古曳 重美
九工大工
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亀頭 直樹
豊橋技術大
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NAKANO Shoichi
New Materials Research Center, Sanyo Electric Co., Ltd.
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武藤 真三
山梨大学工学部
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Takahashi Yoshio
Department Of Cardiology Mie University Graduate School Of Medicine
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小林 由美子
名大工
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Yoshimura Masashi
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Miyamoto A
New Ind. Creation Hatchery Center Tohoku Univ.
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FUNAMOTO Hiroyuki
Seiko Instruments & Electronics Ltd.
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Funamoto Hiroyuki
Seiko Instruments Inc.
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立川 仁典
横市大院理
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KIKUCHI Hideki
Institute for Materials Research, Tohoku University
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TAKAHASHI Masae
Institute for Materials Research, Tohoku University
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ADACHI Hitoshi
Hitachi East Japan Solutions
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ISHII Soh
Department of Physics, Yokohama National University
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高木 恒男
(株)CSE
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本郷 研太
東北大学金属材料研究所
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小山田 隆行
東北大学金属材料研究所
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FURUYA Miou
Department of Physics, Graduate school of Engineering, Yokohama National University
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NAGASAKA Shin-ichiro
Department of Physics, Faculty of Science, Yamagata University
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YOSHINARI Takehisa
Department of Physics, Faculty of Science, Yamagata University
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前園 涼
物材機構
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MIYAMOTO Akira
Department of Applied Chemistry, Graduate School of Engineering, Tohoku University
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UEDONO Akira
Department of Industrial Chemistry, The University of Tokyo
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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MATSUDA Akihisa
Electrotechnical Laboratory
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上原 朋樹
東北大学・金属材料研究所
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五十嵐 伸昭
東北大学・金属材料研究所
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BELOSLUDOV Rodion
東北大学・金属材料研究所
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FARAJIAN Amir
東北大学・金属材料研究所
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水関 博志
東北大学・金属材料研究所
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川添 良幸
東北大学・金属材料研究所
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王 山鷹
東北大学金属材料研究所
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野手 竜之介
東北大学金属材料研究所
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SLUITER Marcel
Institute for Materials Research, Tohoku University
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Kubo M
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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HAMAKAWA Yoshihiro
Faculty of Engineering Science, Osaka University
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澤田 豊
東京工芸大
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Kobayashi Michihiro
Department Of Material Physics
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Kubo Momoji
Department Of Molecular Chemistry And Engineering Tohoku University
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Kubo Momoji
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Muto Shigeki
Department Of Physics School Of Science Tokai University
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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Kobayashi Yumiko
Department of Cardiovascular Medicine, Osaka University Graduate Scool of Medicine
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KIKUCHI Jun
Department of Biotechnology, Faculty of Technology, University of Agriculture and Technology
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HIGUCHI Masahiko
Department of Physics, Faculty of Science, Shinshu University
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Matsuo Yuriko
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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MATSUMURA Michio
Research Center for Photoenergetics of Organic Materials, Osaka University
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Shimizu Yasutaka
CRADLE, Tokyo Institute of Technology
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大野 かおる
横国大工
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Wang J‐t
Inst. Physics Chinese Acad. Sci. Beijing Chn
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Wang Q
Department Of Physics Virginia Commonwealth University
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Wang Qian
Hokushin Co.
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Wang Qian
Department Of Hepatobiliary Surgery The First Affiliated Hospital Of Sun Yat-sen University
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Wang Qian
Department Of Bioresource Development Hiroshima Prefectural University
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Ishii Soh
Department Of Physics Graduate School Of Engineering Yokohama National University
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Wang D‐s
Institute Of Physics Chinese Academy Of Sciences
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Sato H
Institute Of Multidisciplinary For Advanced Materials Research Tohoku University
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Furuya Miou
Department Of Physics Graduate School Of Engineering Yokohama National University
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武藤 真三
山梨大学
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Muto Shunsuke
Center For Integrated Research In Science And Engineering Nagoya University
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Muto Shunsuke
Center For Integrated Research In Science And Engineering (cirse)
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Kubo Masahiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Fukuda T
Waseda Univ. Tokyo Jpn
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Fukuda T
Tohoku Univ.
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田中 正彦
物質研
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WANG Jian-Tao
Institute of Physics, Chinese Academy of Sciences
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Nakano Shoichi
New Materials Research Center Sanyo Electric Co. Ltd.
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Nakano S
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Nakano Shoichi
Department Of Physiology Tokai University School Of Medicine
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Nakano S
東海大学医学部生理科学教室
著作論文
- R-Pd-B系ペロブスカイト型化合物の合成と性質
- ペロブスカイト型希土類ロジウムボライドの磁性、硬度、耐酸化性
- ペロブスカイト型ボライドCeRh_3Bのホウ素不定比と性質
- ペロブスカイト型RRh_3B(R=La, Gd, Lu, Y, Sc)の硬さと耐酸化性
- 25pYR-7 SrTiO_3の全エネルギー表面に対する格子歪み効果の理論的解析(誘電体,領域10(誘電体, 格子欠陥, X線・粒子線, フォノン物性))
- 29pXK-2 ペロブスカイト型強誘電体の全エネルギー表面の谷底線の第一原理計算(誘電体)(領域10)
- 22aWA-2 CH_2分子の等電子異核系列に関するフント則の解釈(電子系,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- 22aWA-5 フント第一、第二則の統一的解釈(電子系,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- 19pWB-5 ビリアル定理に基づく水素分子の化学結合の研究(電子系,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- オブジェクト指向設計によるチベット文字認識研究の発展
- Theoretical Investigation of Stable Structures of Ge_6 Clusters with Various Negative Charges
- All-Electron GW Calculation for Quasiparticle Energies in C_
- 24aXD-8 第二、第三周期原子系列のフント則解釈における電子相関の役割(24aXD 電子系(密度汎関数法),領域11(統計力学,物性基礎論,応用数学,力学,流体物理))
- 26aWG-10 分子のフント経験則の解釈(26aWG 化学物理(シミュレーション・電子状態・光応答),領域12(ソフトマター物理,化学物理,生物物理))
- 効果的なチベット文字認識システム
- 28aTB-10 フント則の起源は何か?(28aTB 原子・分子,領域1(原子・分子,量子エレクトロニクス,放射線物理))
- フント則の起源は何か?(最近の研究から)
- Stability of Copper Atoms Embedded in Sodium-Chloride Crystals
- GW Calculation of a Carbon Oxide Molecular Using an All-Electron Mixed-Basis Approach
- 28pWM-7 量子モンテカルロ法による水素分子の研究(電子系)(領域11)
- 30aXN-8 第一原理GW近似によるベンゼン分子の準粒子エネルギー計算(原子・分子)(素粒子論,宇宙線,領域1,領域11合同)
- オブジェクト指向設計法によるチベット文字認識システム : 認識前処理部について
- Characterization of Diamond Films by Means of a Pulsed Positron Beam
- 20pVC-1 第二,第三周期原子系列の電子構造に対する相関の影響(20pVC 電子系(密度汎関数法),領域11(統計力学,物性基礎論,応用数学,力学,流体物理))
- 分子・固体の安定性はどのように実現されるか?--多電子論におけるビリアル定理の重要性
- 第一原理計算によるメタロセン分子の導電性評価
- 15aWF-2 分子性結晶 DAST の全電子密度分布と分子間静電エネルギー(高圧物性・構造解析, 領域 7)
- 30aWN-2 テラヘルツ波発生のための非線形有機DAST結晶の計算設計 : 分子軌道法からのアプローチ(物質設計・トンネル効果)(領域7)
- 電子構造研究のための多体論基盤 (
- 22aYC-12 金属原子内包シリコン・クラスターの GW 準粒子エネルギー計算
- 大規模シミュレーション計算結果の3次元可視化ソフトウェアの統一とプレゼンテーションシステムの構築
- On extended energy-loss fine structure data analysis for obtaining reliable structural parameters
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
- Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment
- Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy
- Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
- Thermodynamic Properties of Transition Metals Using Face-Centered-Cubic Lattice Model with Renormalized Potentials
- Dependence of Magnetism on Doping Concentration in V-Doped Bulk ZnO
- Quantum Monte Carlo Study of Electron Correlation in Chromium-Doped Silicon Cluster Cr@Si_
- Diffusion Monte Carlo Study of Atomic Systems from Li to Ne
- An Orbital-dependent Correlation Energy Functional in Density-functional Theory for the Study of Strongly-correlated Electronic Systems
- Atomic Structures and Magnetic Behavior of Small Ruthenium Clusters
- Hydrogen Interaction on Rhodium Clusters
- All-Electron Mixed-Basis Calculation of Structurally Optimized Titanium Nitride Clusters
- Self-Separation of a Thick AIN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
- Preparation of a freestanding AIN substrate by hydride vapor phase epitaxy at 1230℃ using (111)Si as a starting substrate
- Thermodynamic Analysis of Various Types of Hydride Vapor Phase Epitaxy System for High-Speed Growth of InN
- Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates
- Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
- Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
- Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
- Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
- 木版刷チベット文献1音節切出し法について
- High-Pressure Effects in Si-As-Te Amorphous Chalcogenide Glasses Fabricated under Microgravity Environment
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- GHz-Band Surface Acoustic Wave Devices Using the Second Leaky Mode on LiTaO_3 and LiNbO_3
- 1.9-GHz-Band Surface Acoustic Wave Device Using Second Leaky Mode on LiTaO_3
- Characteristics of Surface Acoustic Wave on AlN Thin Films
- Characteristics of AlN Thin Films Deposited by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering and Their Application to GHz-Band Surface Acoustic Wave Devices
- Improvement of Coupling Efficiency for Passive Alignment of Stacked Multifiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Improvement on Coupling Efficiency for Passive Alignment of Stacked Multi-Fiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory
- Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
- Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
- Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy
- Structural Dependence of Magnetic Shielding Properties in Al_4Li_4 Clusters
- Electronic and Structural Properties of Organic Molecules inside Carbon Nanotube
- Electronic and Transport Properties of Ferrocene Molecule : Theoretical Study
- Electronic and Transport Properties of Molecular Wires : Theoretical Aspects for Realization of Nanoscale Interconnection
- Genetic Algorithm Approach to Functional Molecules for Nanoscale Devices
- Theoretical Study on Inclusion Complex of Polyaniline Covered by Cyclodextrins for Molecular Device
- New High-Phase-Velocity Leaky Surface Acoustic Wave Mode on LiTaO_3 and LiNbO_3
- Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
- Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
- Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
- Prerecorded Signal Characteristics of High-Density Optical Disks
- Numerical Study on LiCaAlF_6 Czochralski Crystal Growth
- Band Structures of Perovskite-Like Fluorides for Vacuum-Ultraviolet-Transparent Lens Materials
- Structure Similarity of Mixed Buoyancy-Thermocapillary Flow in Half-Zone Liquid Bridge
- Controlling the Percolation Threshold of Conductor-Insulator Composites by Changing the Granular Size of Insulators
- Conductivity Percolation on a Square Lattice with Core-Shell Particles
- Conductivity Percolation on a Square Lattice with Two Different Sizes of Particles
- Thermocapillary Convection of Liquid Bridge under Axisymmetric Magnetic Fields
- Oscillatory Thermocapillary Convection in Liquid Bridge under Microgravity
- Ab initio-Monte Carlo Studies on Magnetic Properties of Tetragonal L1_0 Ordered 3d/Au Superlattices
- Formation Mechanism of Antiphase Boundary Structure in Molecular Beam Epitaxy Grown InGaAs/(110) InP
- Conductivity Percolation on a Cubic Lattice with Two Different Sizes of Particles
- Theoretical Analysis for a Molecular Resonant Tunneling Diode
- Conductivity Percolation on a Cubic Lattice with Core-Shell Particles
- Direct Simulation Monte Carlo for Cluster Growth Process in Rarefied Gas
- Thermal Conductivity of SiC Calculated by Molecular Dynamics
- Controlling 3D Percolation Threshold of Conductor-Insulator Composites by Changing the Granular Size of Conductors
- Preparation of a Freestanding AIN Substrate from a Thick AIN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AIN Substrate Prepared by Physical Vapor Transport
- Controlling the Percolation Threshold of Conductor-Insulator Composites in a 2D Triangular Lattice by Introducing Binary Size Distributions of Conductor Particles