Preparation of a freestanding AIN substrate by hydride vapor phase epitaxy at 1230℃ using (111)Si as a starting substrate
スポンサーリンク
概要
著者
-
Kumagai Y
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
-
Kangawa Yoshihiro
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
関連論文
- R-Pd-B系ペロブスカイト型化合物の合成と性質
- ペロブスカイト型希土類ロジウムボライドの磁性、硬度、耐酸化性
- ペロブスカイト型ボライドCeRh_3Bのホウ素不定比と性質
- ペロブスカイト型RRh_3B(R=La, Gd, Lu, Y, Sc)の硬さと耐酸化性
- 25pYR-7 SrTiO_3の全エネルギー表面に対する格子歪み効果の理論的解析(誘電体,領域10(誘電体, 格子欠陥, X線・粒子線, フォノン物性))
- 29pXK-2 ペロブスカイト型強誘電体の全エネルギー表面の谷底線の第一原理計算(誘電体)(領域10)
- 22aWA-2 CH_2分子の等電子異核系列に関するフント則の解釈(電子系,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- 22aWA-5 フント第一、第二則の統一的解釈(電子系,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- 19pWB-5 ビリアル定理に基づく水素分子の化学結合の研究(電子系,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- オブジェクト指向設計によるチベット文字認識研究の発展
- Theoretical Investigation of Stable Structures of Ge_6 Clusters with Various Negative Charges
- All-Electron GW Calculation for Quasiparticle Energies in C_
- 24aXD-8 第二、第三周期原子系列のフント則解釈における電子相関の役割(24aXD 電子系(密度汎関数法),領域11(統計力学,物性基礎論,応用数学,力学,流体物理))
- 26aWG-10 分子のフント経験則の解釈(26aWG 化学物理(シミュレーション・電子状態・光応答),領域12(ソフトマター物理,化学物理,生物物理))
- 効果的なチベット文字認識システム
- 28aTB-10 フント則の起源は何か?(28aTB 原子・分子,領域1(原子・分子,量子エレクトロニクス,放射線物理))
- フント則の起源は何か?(最近の研究から)
- Stability of Copper Atoms Embedded in Sodium-Chloride Crystals
- GW Calculation of a Carbon Oxide Molecular Using an All-Electron Mixed-Basis Approach
- 28pWM-7 量子モンテカルロ法による水素分子の研究(電子系)(領域11)
- 30aXN-8 第一原理GW近似によるベンゼン分子の準粒子エネルギー計算(原子・分子)(素粒子論,宇宙線,領域1,領域11合同)
- オブジェクト指向設計法によるチベット文字認識システム : 認識前処理部について
- Characterization of Diamond Films by Means of a Pulsed Positron Beam
- 20pVC-1 第二,第三周期原子系列の電子構造に対する相関の影響(20pVC 電子系(密度汎関数法),領域11(統計力学,物性基礎論,応用数学,力学,流体物理))
- 分子・固体の安定性はどのように実現されるか?--多電子論におけるビリアル定理の重要性
- 第一原理計算によるメタロセン分子の導電性評価
- 15aWF-2 分子性結晶 DAST の全電子密度分布と分子間静電エネルギー(高圧物性・構造解析, 領域 7)
- 30aWN-2 テラヘルツ波発生のための非線形有機DAST結晶の計算設計 : 分子軌道法からのアプローチ(物質設計・トンネル効果)(領域7)
- 電子構造研究のための多体論基盤 (
- 22aYC-12 金属原子内包シリコン・クラスターの GW 準粒子エネルギー計算
- 大規模シミュレーション計算結果の3次元可視化ソフトウェアの統一とプレゼンテーションシステムの構築
- On extended energy-loss fine structure data analysis for obtaining reliable structural parameters
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
- Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment
- Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy
- Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
- Thermodynamic Properties of Transition Metals Using Face-Centered-Cubic Lattice Model with Renormalized Potentials
- Dependence of Magnetism on Doping Concentration in V-Doped Bulk ZnO
- Quantum Monte Carlo Study of Electron Correlation in Chromium-Doped Silicon Cluster Cr@Si_
- Diffusion Monte Carlo Study of Atomic Systems from Li to Ne
- An Orbital-dependent Correlation Energy Functional in Density-functional Theory for the Study of Strongly-correlated Electronic Systems
- Atomic Structures and Magnetic Behavior of Small Ruthenium Clusters
- Hydrogen Interaction on Rhodium Clusters
- All-Electron Mixed-Basis Calculation of Structurally Optimized Titanium Nitride Clusters
- Self-Separation of a Thick AIN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
- Preparation of a freestanding AIN substrate by hydride vapor phase epitaxy at 1230℃ using (111)Si as a starting substrate
- Thermodynamic Analysis of Various Types of Hydride Vapor Phase Epitaxy System for High-Speed Growth of InN
- Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
- Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
- Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
- Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
- Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
- 木版刷チベット文献1音節切出し法について
- High-Pressure Effects in Si-As-Te Amorphous Chalcogenide Glasses Fabricated under Microgravity Environment
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- GHz-Band Surface Acoustic Wave Devices Using the Second Leaky Mode on LiTaO_3 and LiNbO_3
- 1.9-GHz-Band Surface Acoustic Wave Device Using Second Leaky Mode on LiTaO_3
- Characteristics of Surface Acoustic Wave on AlN Thin Films
- Characteristics of AlN Thin Films Deposited by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering and Their Application to GHz-Band Surface Acoustic Wave Devices
- Improvement of Coupling Efficiency for Passive Alignment of Stacked Multifiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Improvement on Coupling Efficiency for Passive Alignment of Stacked Multi-Fiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory
- Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
- Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
- Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy
- Structural Dependence of Magnetic Shielding Properties in Al_4Li_4 Clusters
- Electronic and Structural Properties of Organic Molecules inside Carbon Nanotube
- Electronic and Transport Properties of Ferrocene Molecule : Theoretical Study
- Electronic and Transport Properties of Molecular Wires : Theoretical Aspects for Realization of Nanoscale Interconnection
- Genetic Algorithm Approach to Functional Molecules for Nanoscale Devices
- Theoretical Study on Inclusion Complex of Polyaniline Covered by Cyclodextrins for Molecular Device
- New High-Phase-Velocity Leaky Surface Acoustic Wave Mode on LiTaO_3 and LiNbO_3
- Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
- Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
- Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
- Prerecorded Signal Characteristics of High-Density Optical Disks
- Numerical Study on LiCaAlF_6 Czochralski Crystal Growth
- Band Structures of Perovskite-Like Fluorides for Vacuum-Ultraviolet-Transparent Lens Materials
- Structure Similarity of Mixed Buoyancy-Thermocapillary Flow in Half-Zone Liquid Bridge
- Controlling the Percolation Threshold of Conductor-Insulator Composites by Changing the Granular Size of Insulators
- Conductivity Percolation on a Square Lattice with Core-Shell Particles
- Conductivity Percolation on a Square Lattice with Two Different Sizes of Particles
- Thermocapillary Convection of Liquid Bridge under Axisymmetric Magnetic Fields
- Oscillatory Thermocapillary Convection in Liquid Bridge under Microgravity
- Ab initio-Monte Carlo Studies on Magnetic Properties of Tetragonal L1_0 Ordered 3d/Au Superlattices
- Formation Mechanism of Antiphase Boundary Structure in Molecular Beam Epitaxy Grown InGaAs/(110) InP
- Conductivity Percolation on a Cubic Lattice with Two Different Sizes of Particles
- Theoretical Analysis for a Molecular Resonant Tunneling Diode
- Conductivity Percolation on a Cubic Lattice with Core-Shell Particles
- Direct Simulation Monte Carlo for Cluster Growth Process in Rarefied Gas
- Thermal Conductivity of SiC Calculated by Molecular Dynamics
- Controlling 3D Percolation Threshold of Conductor-Insulator Composites by Changing the Granular Size of Conductors
- Preparation of a Freestanding AIN Substrate from a Thick AIN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AIN Substrate Prepared by Physical Vapor Transport
- Controlling the Percolation Threshold of Conductor-Insulator Composites in a 2D Triangular Lattice by Introducing Binary Size Distributions of Conductor Particles