Formation Mechanism of Antiphase Boundary Structure in Molecular Beam Epitaxy Grown InGaAs/(110) InP
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-01-15
著者
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OKI Kensuke
Department of Electronics, Kyoto Institute of Technology
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Oki Kensuke
Department Of Applied Science For Electronics And Materials Interdisciplinary Graduate School Of Eng
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Oki Kensuke
Department Of Advanced Science For Electronics And Materials Kyushu University
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KUWANO Noriyuki
Department of Applied Science for Electronics and Materials, Kyushu University
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KANGAWA Yoshihiro
Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technolo
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Kangawa Yoshihiro
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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Kuwano Noriyuki
Department Of Applied Science For Electronics And Materials Interdisciplinary Graduate School Of Eng
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KOJIMA Chikako
Department of Materials Science and Technology, Interdisciplinary Graduate School of Engineering Sci
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Kangawa Yoshihiro
Department Of Materials Science And Technology Interdisciplinary Graduate School Of Engineering Scie
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Kojima Chikako
Department Of Materials Science And Technology Interdisciplinary Graduate School Of Engineering Scie
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Kangawa Yoshihiro
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
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