Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
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概要
- 論文の詳細を見る
- Published for the Japanese Society of Electron Microscopy by Oxford University Pressの論文
- 2000-04-01
著者
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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KAWAGUCHI Yasutoshi
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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SAWAKI Nobuhiko
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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OKI Kensuke
Department of Electronics, Kyoto Institute of Technology
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Oki Kensuke
Department Of Advanced Science For Electronics And Materials Kyushu University
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KUWANO Noriyuki
Advanced Science and Technology Center for Cooperative Research, Kyushu University
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Kuwano Noriyuki
Advanced Science And Technology Center For Cooperative Research Kyushu University
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Sawaki N
Nagoya Univ. Nagoya Jpn
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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SHIBATA Takumi
Department of Electronics, School of Engineering, Nagoya University
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Hiramatsu Kazumasa
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu K
Ntt Corp. Tsukuba‐shi Jpn
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Sugiura T
Department Of Electrical Engineering Toyota College Of Technology
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TSUKAMOTO Keisuke
Department of Advanced Science for Electronics and Materials, Kyushu University
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TAKI Wataru
Department of Advanced Science for Electronics and Materials, Kyushu University
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HORIBUCHI Kayo
Department of Advanced Science for Electronics and Materials, Kyushu University
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Tsukamoto Keisuke
Department Of Advanced Science For Electronics And Materials Kyushu University
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Horibuchi Kayo
Department Of Advanced Science For Electronics And Materials Kyushu University
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Taki Wataru
Department Of Advanced Science For Electronics And Materials Kyushu University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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SAWAKI Nobuhiko
Department of Electronics, Nagoya University
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