Hot Electron and Real Space Transfer in Double-Quantum-Well Structures

スポンサーリンク

概要

• 論文の詳細を見る

• The hot electron phenomena and real space transfer (RST) effect are studied in GaAs/AlGaAs double-quantum-well (DQW) structures, in which we have two kind of quantum wells with different widths. The drift velocity and the electron temperature at liquid helium temperature are investigated as a function of the external electric field applied parallel to the heterointerface. By increasing the field, the electron temperature rises and reaches a plateau in the intermediate region, followed by further rise in the high-field region. The appearance of the plateau is attributed to the RST effect between the two quantum wells. The threshold field for the appearance of the plateau is determined by the difference energy between the quantized levels in two wells. The energy loss rate as a function of the electron temperature indicates that the RST is assisted by LO phonon scattering.

• 社団法人応用物理学会の論文
• 1991-07-15

著者

• Okuno Eiichi

  Department Of Electronics School Of Engineering Nagoya University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• Kano Hiroyuki

  Toyota Central R & D Labs. Inc.

• Sawaki N

  Nagoya Univ. Nagoya Jpn

• Sawaki Nobuhiko

  Department Of Electronics Faculty Of Engineering Nagoya University

• Hashimoto Masafumi

  Toyota Central R & D Labs. Inc.

• Sawaki Nobuhiko

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

関連論文

• Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
• Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AIGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate : Structure and Machanical and Thermal Properties of Condensed Matter
• Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
• Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
• Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
• Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
• Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
• Microscopic Investigation of Al_Ga_N on Sapphire
• Stress and Defect Control in GaN Using Low Temperature Interlayers
• Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
• Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
• Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
• Optical Transitions of the Mg Acceptor in GaN
• Strain Modification of GaN in AlGaN/GaN Epitaxial Films
• ZrB_2 Substrate for Nitride Semiconductors
• Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
• Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
• Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
• Comparative Study of C-V and Transconductance of a Si δ-Doped GaAs FET Structure
• Picosecond Photoluminescence Study of Relaxation Phenomena of Hot Electrons in a Quasi-One-Dimensional Structure
• On the Electron Mobility in Quasi-One-Dimensional Structures Fabricated by Holographic Lithography and Wet Chemical Etching
• Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
• Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
• Photoluminescence Decay Properties of Indium Doped ZnS
• VPE Growth of ZnS Incorporating Indium on GaP
• Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al_Ga_N/GaN Double Heterostructure
• The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
• Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
• The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
• Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
• Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
• Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
• Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
• GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
• Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
• Optical Properties of Strained AlGaN and GaInN on GaN
• Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
• Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
• Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
• High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
• Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
• Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
• 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
• Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer : Semiconductors
• Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
• Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
• Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
• Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
• Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
• Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
• Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
• The Evolution of Nitride-Based Light-Emitting Devices(Special Issue on Recent Progress in Semiconductor Lasers and Light Emitting Devices)
• Present and Future Nitride-Based Devices
• Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
• Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
• Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
• Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
• Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
• Raman Scattering in ZnS_xSe_ Alloys
• Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
• Low-Intensity Ultraviolet Photodetectors Based on AlGaN
• Investigation of the Leakage Current in GaN P-N Junctions
• Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals : Semiconductors
• LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
• Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
• Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
• Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
• Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
• Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
• Hot Electron and Real Space Transfer in Double-Quantum-Well Structures
• A Supplement to "Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge"
• Etch Patterns and Dislocation Etch Pits on Germanium with KI-I_2 Redox System
• Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge
• Etch Patterns and the Mechanism of Etching of Germanium by Iodine Vapor
• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
• Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
• Etch Patterns in Germanium
• On the Structural Properties of Vapor-Deposited Germanium Layers
• Experimental Studies of Impurity Doping in Vapor Growth of Ge
• Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter
• Progress in Crystal Growth and Conductivity Control of Group III Nitride Semiconductors : Seeking Blue Emission
• Measurement of Minority-Carrier Drift Velocity in Quantum Well Structures by Phololuminescence Intensity Correlation Method
• Electron Mobility and Drag Effect in p-Type Silicon
• Measurement of Electron Mobility in p-Si by Time-of-Flight Technique
• Measurement of Minority-Carrier Diffusion Coefficient in Silicon by AC Photo-Current Method
• Microstructures of GaInN/GaInN Superlattices on GaN Substrates
• High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
• Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
• Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
• Metal--Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density
• Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE
• Metal-Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density (Special Issue : Recent Advances in Nitride Semiconductors)
• Interface-Roughness Scattering in GaAs/AlxGa1-xAs Superlattices
• Thermodynamical Analysis and Luminescence Properties of Vapor-Grown ZnSxSe1-x II—Bypass Flow Effect—

もっと見る 閉じる

スポンサーリンク