Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE
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概要
- 論文の詳細を見る
The electron trap concentration and its in-depth profile have been investigated on InxGa1-xAsyP1-y/(100)GaAs Schottky diodes by the DLTS technique. An electron trap thought to originate from an anion vacancy took a maximum value in concentration as the As fraction reached the middle of the immiscibility region. Because of the relatively low binding energy of the alloy atoms near the middle of the immiscibility region, a large number of anion vacancies are created there. In addition, the influence of the defects in a substrate was considered to explain the higher electron trap concentration near the heterointerface.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-03-20
著者
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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ZHU Qin-Sheng
Department of Electronics, School of Engineering, Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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Zhu Qin-Sheng
Department of Electronics, School of Engineering, Nagoya University, Fro-cho, Chikusa-ku, Nagoya 464
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