Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates

概要

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Two strain relaxation processes have been observed in AGaN layers grown on thick AlN templates. In Process I, $\mbi{a}$-type threading dislocations (TDs) with $\mbi{b}= 1/3\langle 11\bar{2}0\rangle$ from the AlN underlayer are inclined away from the [0001] axis toward the $\langle 1\bar{1}00\rangle$ directions when they enter the AlGaN film, forming dislocation line projection perpendicular to the Burger vector. In Process II, $\mbi{a}+\mbi{c}$-type TDs from the AlN underlayer with Burgers vector of $\mbi{b}= 1/3\langle 11\bar{2}3\rangle$ glide on $\{0\bar{1}11\}$ planes when they enter the AlGaN film to generate interfacial misfit dislocations lying along the $\langle\bar{2}110\rangle$ directions at the AlGaN/AlN interface.
Japan Society of Applied Physicsの論文
2010-11-25