Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
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概要
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We examined the control of the detection wavelength in AlGaN/GaN-based hetero-field-effect-transistor (HFET) photosensors. The detection wavelength of these devices can be controlled by using the p-GaInN optical gate or inserting a GaInN channel layer between AlGaN and GaN. In addition, the photosensitivity of AlGaN/GaN HFET photosensors with a p-GaInN optical gate was more than two orders of magnitude higher than that of the AlGaN/GaN HFET photosensor with a GaInN channel layer. Moreover, the photosensitivity of the AlGaN/GaN HFET photosensor with a p-GaInN optical gate greatly surpassed those of commercially available Si pin and Si avalanche photodiodes, and was comparable to those of photomultiplier tubes.
- 2013-08-25
著者
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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Iwaya Motoaki
Faculty Of Science And Technology Meijo University
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TAKEUCHI Tetsuya
Faculty of Science and Technology, Meijo University
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Ishiguro Mami
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Ikeda Kazuya
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Mizuno Masataka
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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