GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

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概要

• 論文の詳細を見る

• High-performance GaInN-based solar cells with high open-circuit voltage, high short-circuit current density, and good fill factor have been obtained using a combination of two different GaInN superlattice structures. The GaInN barrier thicknesses (3 and 0.6 nm) in both superlattice structures were optimized, resulting in a thick GaInN-based active layer with a low pit density in the device. The conversion efficiency is approximately 2.5% under a solar simulator of air mass 1.5G and an irradiation intensity of 155 mW/cm2.

• 2011-02-25

著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Iida Daisuke

  Faculty Of Science And Technology Meijo University

• Fujii Takahiro

  Faculty Of Science And Technology 21st Coe Program "nano-factory" Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• Amano Hiroshi

  Graduate School Of Horticulture Chiba Univ.

• FUJIYAMA Yasuharu

  Faculty of Science and Technology, Meijo University

• TAKEUCHI Tetsuya

  Faculty of Science and Technology, Meijo University

• Isobe Yasuhiro

  Faculty Of Science And Technology Meijo University

• SUGIYAMA Toru

  Faculty of Science and Technology, Meijo University

• Kuwahara Yousuke

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Morita Yoshiki

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Isobe Yasuhiro

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Sugiyama Toru

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Amano Hiroshi

  Graduate School of Engineering and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Iida Daisuke

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

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