Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
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概要
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We demonstrated lateral Mg activation along p-GaN layers underneath n-GaN surface layers in nitride-based light emitting diodes (LEDs) with GaInN tunnel junctions. A high temperature thermal annealing was effective for the lateral Mg activation when the p-GaN layers were partly exposed to an oxygen ambient as etched sidewalls. The activated regions gradually extended from the etched sidewalls to the centers with an increase of annealing time, observed as emission regions with current injection. These results suggest that hydrogen diffuses not vertically thorough the above n-GaN but laterally through the exposed portions of the p-GaN. The lowest voltage drop at the GaInN tunnel junction was estimated to be 0.9 V at 50 mA with the optimized annealing condition.
- 2013-08-25
著者
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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Iwaya Motoaki
Faculty Of Science And Technology Meijo University
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TAKEUCHI Tetsuya
Faculty of Science and Technology, Meijo University
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Takeuchi Tetsuya
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Kuwano Yuka
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Kaga Mitsuru
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Morita Takatoshi
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Yamashita Kouji
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Yagi Kouta
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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