AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage

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概要

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• AlGaN/GaN heterostructure field-effect transistors (HFETs) were fabricated by metalorganic vapor phase epitaxy (MOPVE) on $c$-plane Fe-doped GaN (GaN:Fe) substrates with different growth conditions of GaN buffer layers. The GaN buffer layers were grown at a V/III ratio of 272 at 300 Torr to realize highly resistive GaN buffer layers with automatic carbon doping. HFETs with carbon-doped GaN buffer layers showed the best characteristics among all the samples in this study. The carbon concentration was $5\times 10^{16}$ cm-3. In the sample with a gate-drain length of 50 μm, the off-state breakdown voltage was 2 kV or higher and the on-resistance was 18.5 m$\Omega$$\cdot$cm2. We found that the carbon-doped GaN buffer layers are necessary for high breakdown voltages even using semi-insulating GaN:Fe substrates.

• 2011-08-25

著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• Amano Hiroshi

  Graduate School Of Horticulture Chiba Univ.

• TAKEUCHI Tetsuya

  Faculty of Science and Technology, Meijo University

• Takeda Kenichiro

  Faculty Of Science And Technology Meijo University

• Oshimura Yoshinori

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Sugiyama Takayuki

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Amano Hiroshi

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Amano Hiroshi

  Graduate School of Engineering and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

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