Anisotropically Biaxial Strain in $a$-Plane AlGaN on GaN Grown on $r$-Plane Sapphire
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概要
- 論文の詳細を見る
In this study, the anisotropically biaxial strain in $a$-plane AlGaN on GaN is investigated by X-ray diffraction (XRD) analysis using an AlGaN/GaN heterostructure grown on $r$-plane sapphire. In accordance with XRD reciprocal lattice space mapping, when the AlN molar fraction $x$ in the AlGaN layer is 0.18, the AlGaN layer is fully strained under tensile stress and grows coherently on the underlying GaN layer. However, when $x$ is as large as 0.31, partial relaxation is observed only in the $c$-axis direction. The tensile stress in the AlGaN layer is calculated taking the actual in-plane lattice constants of the underlying GaN layer into account, and it was found that the stress in the $a$-plane AlGaN layer in the $c$-axis direction is approximately 1.7 times larger than that in the $m$-axis direction.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-15
著者
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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TSUDA Michinobu
Single Crystal Division, Kyocera Corporation
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Iwaya Motoaki
Faculty Of Science And Technology Meijo University
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HONSHIO Akira
Faculty of Science and Technology, 21st-Century COE Program "Nano-Factory", Meijo University
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Amano Hiroshi
Faculty Of Horticulture Chiba University
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Akasaki Isamu
Faculty of Science and Technology, 21st COE program "Nano-Factory", Meijo University, 1-501 Tempaku-ku, Nagoya 468-8502, Japan
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Furukawa Hiroko
Faculty of Science and Technology, 21st COE program "Nano-Factory", Meijo University, 1-501 Tempaku-ku, Nagoya 468-8502, Japan
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Furukawa Hiroko
Faculty of Science and Technology, 21st COE program "Nano-Factory", Meijo University, 1-501 Tempaku-ku, Nagoya 468-8502, Japan
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Honshio Akira
Faculty of Science and Technology, 21st COE program "Nano-Factory", Meijo University, 1-501 Tempaku-ku, Nagoya 468-8502, Japan
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Tsuda Michinobu
Single Crystal Division, Kyocera Corporation, 1166-6 Nagatanino, Hebimizo-cho, Higashiomi, Shiga 527-8555, Japan
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Kamiyama Satoshi
Faculty of Science and Technology, 21st COE program "Nano-Factory", Meijo University, 1-501 Tempaku-ku, Nagoya 468-8502, Japan
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