Correlation between Device Performance and Defects in GaInN-Based Solar Cells

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概要

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• We investigated the correlation between the device performance and defects, such as V-shaped pits and threading dislocations, in GaInN-based solar cells. To realize high-performance GaInN-based solar cells with a high open-circuit voltage and fill factor, it is essential to realize a low pit density of less than 10^{7} cm-2. In this study, we were unable to observe clear evidence of any effect of the threading dislocation density in the GaN underlying layer.

• 2012-08-25

著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Fujii Takahiro

  Faculty Of Science And Technology 21st Coe Program "nano-factory" Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• TAKEUCHI Tetsuya

  Faculty of Science and Technology, Meijo University

• Nakao Tatsuro

  Faculty Of Science And Technology Meijo University

• Yamamoto Shota

  Faculty Of Science And Technology Meijo University

• Amano Hiroshi

  Graduate School of Engineering and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• KONDO Shinichiro

  Faculty of Science and Technology, Meijo University

• MORI Mikiko

  Faculty of Science and Technology, Meijo University

• Mori Mikiko

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

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