Microstructures of GaInN/GaInN Superlattices on GaN Substrates

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概要

• 論文の詳細を見る

• We found different behaviors of misfit dislocations in a Ga0.83In0.17N single layer and in Ga0.83In0.17N/Ga0.93In0.07N superlattices, both on GaN substrates. In the case of the single layer, misfit dislocations were formed at the GaInN/GaN interfaces and extended through the GaInN layer to the surface. In contrast, the misfit dislocations in the superlattices are bent laterally at interfaces between the Ga0.83In0.17N and Ga0.93In0.07N layers. In addition, most of the dislocations do not reach the surface owing to the formation of dislocation loops. As a result, the dislocation density at the surface of the GaInN superlattice sample was $5\times 10^{7}$ cm-2.

• 2011-01-25

著者

• Takeuchi Tetsuya

  Department Of Electrical And Electronic Engineering Meijo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• IWAYA Motoaki

  Department of Electrical and Electronic Engineering, Meijo University

• KAMIYAMA Satoshi

  Department of Materials Science and Engineering, and Nano-factory, Meijo University

• Nonaka Kentaro

  Department Of Surgery Rinku General Medical Center

• Amano Hiroshi

  Graduate School Of Horticulture Chiba Univ.

• Kuwahara Yosuke

  Department Of Orthodontics School Of Dental Medicine Tsurumi University

• Sugiyama Toru

  Department Of Chemical Engineering Kyoto University

• Fujii Takahiro

  Department Of Astronomy The University Of Tokyo Institute Of Astronomy The University Of Tokyo

• Isobe Yasuhiro

  Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan

• Nonaka Kentaro

  Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan

• Kuwahara Yosuke

  Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan

• Sugiyama Toru

  Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan

• Amano Hiroshi

  Graduate School of Engineering and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Kamiyama Satoshi

  Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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