Fujii Takahiro | Faculty Of Science And Technology 21st Coe Program "nano-factory" Meijo University

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著作論文

Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate
GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate
Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
Correlation between Device Performance and Defects in GaInN-Based Solar Cells
Correlation between Device Performance and Defects in GalnN-Based Solar Cells
High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

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