High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

スポンサーリンク

概要

• 論文の詳細を見る

• High-quality AlN layers were grown on $c$-plane sapphire substrates by high-temperature metal-organic vapor phase epitaxy. AlN layers of about 9 μm in thickness with an atomically flat surface were obtained without cracks. Multiple modulation of the V/III ratio during growth led to a reduction in the number of dislocations during the growth transition period. The dislocation density of the AlN layers was found to be less than $3\times 10^{8}$ cm-2.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-11-15

著者

• Imura Masataka

  Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University

• Nakano Kiyotaka

  Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University

• Fujimoto Naoki

  Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University

• NORO Tadashi

  Ceramic Operation, Ibiden Co., Ltd.

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Bandoh Akira

  Corporate R&d Center Showa Denko K.k.

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Okada Narihito

  Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• Balakrishnan Krishnan

  Faculty Of Science And Technology 21st Century Coe Nano-factory Meijo University

• Amano Hiroshi

  Faculty Of Horticulture Chiba University

• Takagi Takashi

  Ceramic Operation Ibiden Company Limited

• Balakrishnan Krishnan

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

• Bandoh Akira

  Corporate R&D Center, Showa-Denko K.K., 1-1-1 Ohodai, Midori-ku, Chiba 276-0056, Japan

• Takagi Takashi

  Ceramic Operation, Ibiden Co., Ltd., Ogaki, Gifu 503-8503, Japan

• Noro Tadashi

  Ceramic Operation, Ibiden Co., Ltd., Ogaki, Gifu 503-8503, Japan

• Amano Hiroshi

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

• Fujimoto Naoki

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

関連論文

• Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy
• 台湾中西部におけるカンザワハダニの越冬生態と休眠特性
• Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
• High-Temperature Metal-organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying 5/3 Ratio
• Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
• Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
• Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
• ZrB_2 Substrate for Nitride Semiconductors
• Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
• Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
• High-Power UV-Light-Emitting Diode on Sapphire
• Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
• Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
• High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
• Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
• Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
• Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method
• Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate
• Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
• AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
• GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate
• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
• Diversity and abundance of phytoseiid mites on Magnolia hypoleuca Siebold et Zuccarini, a candidate source of natural enemies in natural vegetation
• Chemical Ecology of Astigmatid Mites. : XLVI Neryl Formate, the Alarm Pheromone of Rhizoglyphus setosus MANSON (Acarina: Acaridae) and the Common Pheromone Component among Four Rhizoglyphus Mites
• Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
• Attractancy of Alcohols Isolated from Culture Filtrates of Fusarium Fungi for the Robine Bulb Mite, Rhizoglyphus robini CLAPAREDE (Acari : Acaridae), in Sand
• AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
• Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
• Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
• Correlation between Device Performance and Defects in GaInN-Based Solar Cells
• Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
• Indium--Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
• Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
• D213 Differential toxicity of selected pesticides to Diadegma semiclausum (Hellen) and Oomyzus sokolowskii (Kurdjumov), potential parasitoids of the diamondback moth in Southeast Asia and Pacific
• Anisotropically Biaxial Strain in $a$-Plane AlGaN on GaN Grown on $r$-Plane Sapphire
• Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
• Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy
• Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
• High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
• High-Power UV-Light-Emitting Diode on Sapphire
• Flat $(11\bar{2}0)$ GaN Thin Film on Precisely Offset-Controlled $(1\bar{1}02)$ Sapphire Substrate
• Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient
• Correlation between Device Performance and Defects in GalnN-Based Solar Cells
• High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate
• Study on Efficiency Component Estimation of 405 nm Light Emitting Diodes from Electroluminescence and Photoluminescence Intensities
• Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
• Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
• Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
• GaInN-Based Tunnel Junctions in n--p--n Light Emitting Diodes
• Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
• Combination of Indium--Tin Oxide and SiO
• Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities
• Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
• Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
• Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al
• Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
• Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions (Special Issue : Recent Advances in Nitride Semiconductors)
• High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
• Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers (Special Issue : Recent Advances in Nitride Semiconductors)
• Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures (Special Issue : Recent Advances in Nitride Semiconductors)
• Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors

もっと見る 閉じる

スポンサーリンク