Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る

• A novel high temperature metalorganic vapor phase epitaxy (MOVPE) growth of AlN bridge layer is reported. Positive influence of high temperature on the growth rate and reduction of dislocation content in the AlN bridge layer has been observed. Transmission electron microscopy, X-ray diffraction, and atomic force microscopy analyses confirmed that the layer had high structural quality and smooth morphology.

• Japan Society of Applied Physicsの論文
• 2007-04-25

著者

• Bandoh Akira

  Corporate R&d Center Showa Denko K.k.

• Akasaki Isamu

  21st Century Center-of-Excellence (COE) Nano-Factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

• Balakrishnan Krishnan

  21st Century Center-of-Excellence (COE) Nano-Factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

• Iwaya Motoaki

  21st Century Center-of-Excellence (COE) Nano-Factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

• Kamiyama Satoshi

  21st Century Center-of-Excellence (COE) Nano-Factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

• Amano Hiroshi

  21st Century Center-of-Excellence (COE) Nano-Factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

• Bandoh Akira

  Corporate R&D Center, Showa-Denko K.K., 1-1-1 Ohodai, Midori-ku, Chiba 267-0056, Japan

関連論文

• Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy
• Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
• Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
• Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
• High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

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