Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient
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概要
- 論文の詳細を見る
Annealing in oxygen ambient was found to be effective for realizing a high hole concentration in p-type Al0.17Ga0.83N:Mg. The maximum hole concentration obtained was $1.3\times 10^{16}$ cm-3 at room temperature. Hydrogen dissociation from Mg-doped Al0.17Ga0.83N is found to be enhanced by annealing in a flow of O2 compared with annealing in a flow of N2.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-10-25
著者
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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Iwaya Motoaki
Faculty Of Science And Technology Meijo University
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NAGAMATSU Kentaro
Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University
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Amano Hiroshi
Faculty Of Horticulture Chiba University
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Takeda Kenichiro
Faculty Of Science And Technology Meijo University
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Amano Hiroshi
Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Nagata Kengo
Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Ichikawa Tomoki
Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Nagamatsu Kentaro
Faculty of Science and Technology, Meijo University
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Nagamatsu Kentaro
Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Kamiyama Satoshi
Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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