Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
スポンサーリンク
概要
- 論文の詳細を見る
We obtained high-quality AlGaInN/GaN quantum wells (QWs) with a 385 nm emission by adding Al sources to GaInN QWs grown at a low growth pressure of 150 mbar. When AlGaInN QWs were grown at a relatively high growth pressure of 400 mbar, a considerable amount of peculiar trench-shaped defects were observed on the surface of the AlGaInN QWs. We found that the trench defects acted as nonradiative centers, leading to low photoluminescence (PL) intensities. Our experiments reveal that a low growth pressure is effective in suppressing the trench defect formation, resulting in high-quality AlGaInN QWs.
- 2013-08-25
著者
-
Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
-
Akasaki Isamu
Faculty Of Science And Technology Meijo University
-
Iwaya Motoaki
Faculty Of Science And Technology Meijo University
-
TAKEUCHI Tetsuya
Faculty of Science and Technology, Meijo University
-
Kaga Mitsuru
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
-
Suzuki Tomoyuki
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
-
Naniwae Kouichi
EL-SEED Corporation, Nagoya 468-0073, Japan
-
Hirano Keisuke
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
-
Kitano Tsukasa
EL-SEED Corporation, Nagoya 468-0073, Japan
関連論文
- Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
- Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
- Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
- High-Power UV-Light-Emitting Diode on Sapphire
- Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
- Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
- High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
- Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method
- Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate
- Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
- AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
- GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
- AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
- Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
- Correlation between Device Performance and Defects in GaInN-Based Solar Cells
- Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
- Indium--Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
- Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
- Anisotropically Biaxial Strain in $a$-Plane AlGaN on GaN Grown on $r$-Plane Sapphire
- 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
- Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy
- Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
- High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
- High-Power UV-Light-Emitting Diode on Sapphire
- Flat $(11\bar{2}0)$ GaN Thin Film on Precisely Offset-Controlled $(1\bar{1}02)$ Sapphire Substrate
- Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient
- Correlation between Device Performance and Defects in GalnN-Based Solar Cells
- High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate
- Study on Efficiency Component Estimation of 405 nm Light Emitting Diodes from Electroluminescence and Photoluminescence Intensities
- Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
- Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
- GaInN-Based Tunnel Junctions in n--p--n Light Emitting Diodes
- Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
- Combination of Indium--Tin Oxide and SiO
- Metal--Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density
- Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities
- Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
- Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
- Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions (Special Issue : Recent Advances in Nitride Semiconductors)
- High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Metal-Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density (Special Issue : Recent Advances in Nitride Semiconductors)
- Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers (Special Issue : Recent Advances in Nitride Semiconductors)
- Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures (Special Issue : Recent Advances in Nitride Semiconductors)
- Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors