Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes

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概要

• 論文の詳細を見る

• We investigated the concentration properties of GaInN-based solar cells using different window electrodes. A significant difference was observed between the concentrating properties of the window electrode structures. It was clearly found that indium tin oxide (ITO) is suitable as an electrode. The short-circuit current density, open-circuit voltage, fill factor, and energy conversion efficiency of nitride-based solar cells fabricated using an ITO electrode were 7.1\times 10^{2} mA/cm², 2.2 V, 79%, and 4.0%, respectively, under an air mass filter of 1.5G at 300 suns and at room temperature.

• 2013-08-25

著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• TAKEUCHI Tetsuya

  Faculty of Science and Technology, Meijo University

• Nakao Tatsuro

  Faculty Of Science And Technology Meijo University

• Yamamoto Shota

  Faculty Of Science And Technology Meijo University

• KONDO Shinichiro

  Faculty of Science and Technology, Meijo University

• MORI Mikiko

  Faculty of Science and Technology, Meijo University

• Amano Hiroshi

  Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Amano Hiroshi

  Akasaki Research Center, Nagoya University, Nagoya 464-8062, Japan

関連論文

• Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
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• ZrB_2 Substrate for Nitride Semiconductors
• Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
• Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
• High-Power UV-Light-Emitting Diode on Sapphire
• Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
• Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
• High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
• Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
• Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
• Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method
• Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate
• Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
• AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
• GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate
• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
• Fabrication of nonpolar a-plane nitride-based solar cell on r-plane sapphire substrate
• Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
• AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
• Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
• Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
• Correlation between Device Performance and Defects in GaInN-Based Solar Cells
• Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
• Indium--Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
• Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
• Anisotropically Biaxial Strain in $a$-Plane AlGaN on GaN Grown on $r$-Plane Sapphire
• 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
• Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy
• Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
• High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
• High-Power UV-Light-Emitting Diode on Sapphire
• Flat $(11\bar{2}0)$ GaN Thin Film on Precisely Offset-Controlled $(1\bar{1}02)$ Sapphire Substrate
• Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient
• Correlation between Device Performance and Defects in GalnN-Based Solar Cells
• High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate
• Study on Efficiency Component Estimation of 405 nm Light Emitting Diodes from Electroluminescence and Photoluminescence Intensities
• Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
• Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
• Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
• GaInN-Based Tunnel Junctions in n--p--n Light Emitting Diodes
• Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
• Combination of Indium--Tin Oxide and SiO
• Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities
• Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
• Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
• Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al
• Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
• Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions (Special Issue : Recent Advances in Nitride Semiconductors)
• High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
• Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers (Special Issue : Recent Advances in Nitride Semiconductors)
• Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures (Special Issue : Recent Advances in Nitride Semiconductors)
• Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors

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