Combination of Indium--Tin Oxide and SiO

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概要

• 論文の詳細を見る

• We have investigated novel reflective electrodes by combining an indium--tin oxide (ITO) layer and a SiO<inf>2</inf>/AlN dielectric multilayer (DM) for UV-light-emitting diodes (LEDs). The reflectance of 10 pairs of SiO<inf>2</inf>/AlN DM reached 98.5% at 350 nm. As a result, the ITO/DM electrodes simultaneously satisfied the requirements of high reflectivity in the UV region, good contact characteristics, and current spreading. The light output power of the UV LED with an ITO/DM electrode is 1.2 and 1.6 times higher than those of LEDs with ITO/Al and Ni/Au electrodes, respectively.

• 2013-08-25

著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• TAKEUCHI Tetsuya

  Faculty of Science and Technology, Meijo University

• Takeda Kenichiro

  Faculty Of Science And Technology Meijo University

• Amano Hiroshi

  Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Nakashima Tsubasa

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Shinzato Hiroshi

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Amano Hiroshi

  Akasaki Research Center, Nagoya University, Nagoya 464-8062, Japan

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