Trends in Capacitor Dielectrics for DRAMs (Special Issue on LSI Memories)
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概要
- 論文の詳細を見る
Material research on capacitor dielectrics for DRAM applications is reviewed. The state of the art technologies to prepare Si_3N_4, Ta_2O_5, and SrTiO_3 thin films for capacitors are described. The down-scaling limits for Si_3N_4 and Ta_2O_5 capacitors seem to be 3.5 and 1.5 nm SiO_2 equivalent thickness, respectively. Combined with a rugged polysilicon electrode surface, Si_3N_4 and Ta_2O_5 based-capacitors are available for 256 Mbit and 1 Gbit DRAMs. At the present time, the minimum SiO_2 equivalent thickness for high permittivity materials is around 1 nm with the leakage current density of 10^<-7> A / cm^2. Among the great variety of ferroelectrics, two families of materials, i.e., Pb (Zr, Ti) O_3 and (Ba, Sr) TiO_3 have emerged as the most promising candidates for 1 Gbit DRAMs and beyond. If the chemical vapor deposition technology can be established for these materials, capacitor dielectrics should not be a limiting issue for Gbit DRAMs.
- 社団法人電子情報通信学会の論文
- 1993-11-25
著者
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ISHITANI Akihiko
ULSI Device Development Laboratories, NEC Corporation
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Ando K
Kyushu Sangyo Univ. Fukuoka‐shi Jpn
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LESAICHERRE Pierre-Yves
ULSI Device Development Laboratories, NEC Corporation
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Watanabe Hirohito
Ulsi Device Development Laboratories Nec Corporation
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Kamiyama S
Silicon Systems Research Laboratories Nec Corporation
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Kamiyama Satoshi
Ulsi Device Development Laboratories Nec Corporation
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Lesaicherre Pierre-yves
Ulsi Device Development Laboratories Nec Corporation
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Lesaicherre P‐y
Ulsi Device Development Laboratories Nec Corporation
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Ando K
Graduate School Of Life And Environmental Sciences University Of Tsukuba
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Ando Koichi
ULSI Device Development Laboratories, NEC Corporation
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Ishitani A
O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat
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Ishitani Akihiko
Ulsi Device Development Laboratories Nec Corporation
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Kamiyama Satoshi
Faculty of Science and Technology, Meijo University
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Kamiyama Satoshi
Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University
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