Theoretical Studies on the Dielectric Breakdown of the SiO_2 Thin Films

スポンサーリンク

概要

• 論文の詳細を見る

• Electronic structures of oxygen deficiency in the SiO_2 thin film are theoretically studied by using the cluster models of Si_2O_7H_6 and Si_2O_6H_6 in order to reveal the mechanism of dielectric breakdown observed in the thin films. It is found that the oxygen deficiency induces electron traps rather than hole traps. Furthermore, F^- ions captured through the HF treatments are considered to be a key to introduce the oxygen deficiency in the SiO_2 thin films.SiO_2 thin filmdielectric breakdownoxygen deficiencyelectron trapab initio molecular orbital calculation

• 東北大学の論文
• 1994-03-25

著者

• ISHITANI Akihiko

  ULSI Device Development Laboratories, NEC Corporation

• Ohta Noriko

  Nec Scientific Information System Development Ltd.

• Mochizuki Yasunori

  Institute Of Industrial Science University Of Tokyo

• Mochizuki Yasuhiro

  Hitachi Research Laboratory Hitachi Ltd.

• Takada T

  New Cosmos Electric Co. Ltd. Osaka Jpn

• Mochizuki Yuji

  Fundamental Research Laboratories Nec Corporation

• TAKADA Toshikazu

  Fundamental Research Laboratories, NEC Corporation

• Yokozawa Ayumi

  Ulsi Device Development Labs. Nec Corporation

• Ishitani A

  O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat

• Takada Toshikazu

  Fundamental Research Laboratories Nec Corporation

• Ishitani Akihiko

  Ulsi Device Development Laboratories Nec Corporation

関連論文

• Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
• Multi-Coil System for Electron Cyclcotron Resonance Plasma Generation
• Uniform Electron Cyclotron Resonance Plasma Generation for Precise ULSI Patterning
• Dependence of Electron Cyclotron Resonance Plasma Characteristics on Introduced Microwave Conditions
• Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
• Structural and Electrical Characterization of SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
• Evidence for Creation of Gallium Antisite Defect in Surface Region of Bleat-Treated GaAs
• The Role of Gallium Antisite Defect in Activation and Type-Conversion in Si Implanted GaAs
• Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs (Special Issue on Quarter Micron Si Device and Process Technologies)
• Trends in Capacitor Dielectrics for DRAMs (Special Issue on LSI Memories)
• Measurement of Charge Distributions in Organic Photoconductor Using Pulse Ultrasonic Wave : Acoustical Measurements and Instrumentation
• Measurement of Electric Field Dsitributions in Solid Dielectrics Using Ultrasonic Waves : Acoustical Measurements and Instrumentation
• Effect of Ion Doping Process on Thin-Film Transistor Characteristics Using a Bucket-Type Ion Source and XeCl Excimer Laser Annealing
• Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode
• On the Reaction Scheme for Ti/TiN Chemical Vapor Deposition (CVD) Process Using TiCl_4
• Effects of Applied Magnetic Fields on Silicon Oxide Films Formed by Microwave Plasma CVD : Nuclear Science, Plasmas and Electric Discharges
• X-Ray Fluorescence Analysis of Hg in SiO_2 Films Deposited by Hg-Sensitized Photo-CVD
• Theoretical Studies on the Dielectric Breakdown of the SiO_2 Thin Films
• Leakage Current Reduction of Poly-Si Thin Film Transistors by Two-Step Annealing
• Targeting the Development of a Virtual Microscope
• Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing
• Silicon Selective Epitaxial Growth over Thick SiO_2 Islands
• Facet Formation in Selective Silicon Epitaxial Growth
• Device Layer Transfer Technique using Chemi-Mechanical Polishing
• Crystalline Defects in Selectively Epitaxial Silicon Layers
• Theoretical Study of the Surface Reaction Mechanism of GaN with HCl
• Recent Development of Multireference Density Functional Theory
• Copper Adsorption Behavior on Silicon Substrates (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• New Concerted Mechanism of the Cl-Removal Reaction Induced by H_2 in Chloride Atomic Layer Epitaxy
• Determination of Spatial Electric Field/Charge/Potential Distributions in Polymer Film Using an Acoustic Step-Wave Probing Technique

もっと見る 閉じる

スポンサーリンク