Theoretical Study of the Surface Reaction Mechanism of GaN with HCl
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概要
- 論文の詳細を見る
Ab initio molecular orbital calculations are performed to investigate the three successive surface reactions of GaN with HCl. These reactions correspond to the simplest model which accounts for GaN chemical etching by HCl. We observed two characteristic points about these reactions. First, all of these reactions are exothermic and the reaction energies are about 20-29 kcal/mol. Second, the activation energy of the reaction decreases as the number of Ga-Cl bonds increases. The calculation shows that the first reaction of the GaN surface with HCl is the rate-determining one and the calculated reaction barrier is less than 10kcal/mol.
- 社団法人応用物理学会の論文
- 1996-12-15
著者
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Mochizuki Yasunori
Institute Of Industrial Science University Of Tokyo
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Mochizuki Yasuhiro
Hitachi Research Laboratory Hitachi Ltd.
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Takada T
New Cosmos Electric Co. Ltd. Osaka Jpn
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Mochizuki Yuji
Fundamental Research Laboratories Nec Corporation
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Okamoto Yasuharu
Fundamental Research Laboratories Nec Corporation
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Takada Toshikazu
Fundamental Research Laboratories Nec Corporation
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