The Role of Gallium Antisite Defect in Activation and Type-Conversion in Si Implanted GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-12-20
著者
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Hiramoto Toshiro
Research Center for Function-Oriented Electronics, Institute of Industrial Sciece, University of Tok
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Mochizuki Yasunori
Research Center for Function-Oriented Electronics, Institute of Industrial Sciece, University of Tok
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Saito Toshio
Research Center for Function-Oriented Electronics, Institute of Industrial Sciece, University of Tok
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Ikoma Toshiaki
Research Center for Function-Oriented Electronics, Institute of Industrial Sciece, University of Tok
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Mochizuki Yasunori
Institute Of Industrial Science University Of Tokyo
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Mochizuki Yasunori
Research Center For Function-oriented Electronics Institute Of Industrial Science University Of Toky
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Mochizuki Yasuhiro
Hitachi Research Laboratory Hitachi Ltd.
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Saito T
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Ikoma T
Univ. Tokyo Tokyo Jpn
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Ikoma Toshiaki
Research Center For Function-oriented Electronics Institute Of Industrial Science University Of Toky
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Ikoma Toshiaki
The Institute Of Industrial Science The University Of Tokyo
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