Identification of the "EL2 Family" Midgap Levels in GaAs
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概要
- 論文の詳細を見る
Our arsneic cluster model for the midgap levels (EL2 family) is discussed in more details to account for the data of ESR and related measurements. It is shown that defect states in three fold coordinated amorphous arsenic clusters, namely four fold coordinated arsenic atoms, might give rise to an ESR spectrum which was previously attributed to an arsenic antisite. Moreover, the cluster model is more preferable in explaining complex ESR data which were recently observed. Defect reactions in arsenic clusters may predict peculiar optical properties of the EL2 family which have similarities to those in bulk amorphous arsenic. Motions of dislocations, annealing effects and laser degradation can also be explained by the behavior of excess arsenics (arsenic clusters) in GaAs.
- 社団法人応用物理学会の論文
- 1985-12-20
著者
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Mochizuki Yasunori
Research Center for Function-Oriented Electronics, Institute of Industrial Sciece, University of Tok
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Ikoma Toshiaki
Research Center for Function-Oriented Electronics, Institute of Industrial Sciece, University of Tok
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Mochizuki Yasunori
Research Center For Function-oriented Electronics Institute Of Industrial Science University Of Toky
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Ikoma Toshiaki
Research Center For Function-oriented Electronics Institute Of Industrial Science University Of Toky
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Ikoma Toshiaki
Research Center For Function-oriented Electronics Institute Of Industrial Science University Of Toky
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Mochizuki Yasunori
Research Center For Function-oriented Electronics Institute Of Industrial Science University Of Toky
関連論文
- The Role of Gallium Antisite Defect in Activation and Type-Conversion in Si Implanted GaAs
- Rapid Thermal Annealing of Si^+ Implanted GaAs in the Presence of Arsenic Pressure by GaAs Powder
- Optical Recovery of Photoquenching at the Midgap Electron Traps (EL2 Family) in GaAs
- Identification of the "EL2 Family" Midgap Levels in GaAs