Optical Recovery of Photoquenching at the Midgap Electron Traps (EL2 Family) in GaAs
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-11-20
著者
-
Mochizuki Yasunori
Research Center for Function-Oriented Electronics, Institute of Industrial Sciece, University of Tok
-
Ikoma Toshiaki
Research Center for Function-Oriented Electronics, Institute of Industrial Sciece, University of Tok
-
Mochizuki Yasunori
Research Center For Function-oriented Electronics Institute Of Industrial Science University Of Toky
-
Ikoma Toshiaki
Research Center For Function-oriented Electronics Institute Of Industrial Science University Of Toky
関連論文
- The Role of Gallium Antisite Defect in Activation and Type-Conversion in Si Implanted GaAs
- Rapid Thermal Annealing of Si^+ Implanted GaAs in the Presence of Arsenic Pressure by GaAs Powder
- Optical Recovery of Photoquenching at the Midgap Electron Traps (EL2 Family) in GaAs
- Identification of the "EL2 Family" Midgap Levels in GaAs