Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
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概要
- 論文の詳細を見る
We have systematically studied the characteristics of Si doping in GaAs grown on (311) A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480℃. The highest hole density obtained for uniformly doped layers was 1.5 ×10^<20> cm^<-3>, while for δ-doped layers the sheet hole density as high as 2.6×10^<13> cm^<-2> was achieved. This is the highest hole density ever reported for δ-doped GaAs.
- 社団法人電子情報通信学会の論文
- 1994-09-25
著者
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Agawa Kenichi
The Institute Of Industrial Science The University Of Tokyo
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Sakamoto Noriaki
The Institute Of Industrial Science The University Of Tokyo
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Hirakawa K
Univ. Tokyo Tokyo Jpn
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Ikoma T
Univ. Tokyo Tokyo Jpn
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Hashimoto Y
System Platforms Research Laboratories Nec Corporation
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Hashimoto Yoshio
the Institute of Industrial Science, The University of Tokyo
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Hirakawa Kazuhiko
the Institute of Industrial Science, The University of Tokyo
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Ikoma Toshiaki
the Institute of Industrial Science, The University of Tokyo
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Ikoma Toshiaki
The Institute Of Industrial Science The University Of Tokyo
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