特集2 : 研究解説 : Transient of Electrostatic Potential at GaAs/AlAs Heterointerfaces Characterized by X-Ray Photoemission Spectroscopy
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概要
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小特集 機能エレクトロニクス研究センターWe systematically studied the Ga3d and Al2p cation core level binding energies in molecular beam epitaxially grown GaAs/AlAs heterostructures by in-situ x-ray photoemission spectroscopy. The valence band offset ΔEv at GaAs/AlAs interface is found to be 0.44±0.55 eV. Furthermore, we found that the cation core level binding energies in the extreme vicinity of the interface are shifted by ～0.1 eV from their respective bulk values, which clearly indicates that the charge distribution and the resulting band offsets have a transient over a distance of at least ±2 monolayers from the heterointerface.
- 2011-11-18
著者
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Hirakawa K
Univ. Tokyo Tokyo Jpn
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Ikoma T
Univ. Tokyo Tokyo Jpn
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Hashimoto Y
System Platforms Research Laboratories Nec Corporation
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Ikoma Toshiaki
The Institute Of Industrial Science The University Of Tokyo
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- 特集2 : 研究解説 : Transient of Electrostatic Potential at GaAs/AlAs Heterointerfaces Characterized by X-Ray Photoemission Spectroscopy