X-Ray Fluorescence Analysis of Hg in SiO_2 Films Deposited by Hg-Sensitized Photo-CVD
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概要
- 論文の詳細を見る
SiO_2 films produced by Hg-sensitized photo-CVD were examined using X-ray fluorescence analysis with synchrotron radiation under a grazing incident condition. In all the SiO_2 films studied Hg was detected. The concentrations were in the range 60 to 190 ppm. From the glancing-angle dependence of the HgL_α intensity, it was concluded that Hg was not localized at the film surface, but was distributed throughout.
- 社団法人応用物理学会の論文
- 1986-09-20
著者
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Iida Atsuo
Photon Factory, Institute of Materials Structure Science
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Iida Atsuo
Photon Factory Institute Of Materials Structure Science
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USAMI Katsuhisa
Hitachi Research Laboratory of Hitachi Ltd.
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Usami Katsuhisa
Hitachi Research Laboratory Hitachi Lid.
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Usami Katsuhisa
Hitachi Research Laboratory
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GOHSHI Yohichi
Department of Applied Chemistry, University of Tokyo
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Mochizuki Yasuhiro
Hitachi Research Laboratory Hitachi Ltd.
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Mochizuki Yasuhiro
Hitachi Research Labolatory Hitachi Ltd.
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Mochizuki Yasuhiro
Hitachi Research Laboratory Hitachi Lid.
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Gohshi Yohichi
Department Of Applied Chemistry School Of Engineering The University Of Tokyo
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MINAGAWA Tadashi
Hitachi Research Laboratory, Hitachi Lid.
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Minagawa Tadashi
Hitachi Research Laboratory Hitachi Lid.
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Gohshi Yohichi
Department Of Applied Chemistry Faculty Of Engineering The University Of Tokyo
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- Preface
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