Surface Sensitive X-ray Absorption Fine Structure Measurement Using Sample Current Induced by Totally Reflected X-rays.
スポンサーリンク
概要
- 論文の詳細を見る
X-ray induced current intensity and Auger electron intensity of a GaAs wafer are measured as a function of the angle of incidence of the x-rays of 2-keV photon energy using synchrotron radiation. It is found that the current intensity curve plotted as a function of the x-ray incident angle resembles the Auger electron intensity curve, but a little difference exists which originates from the difference of the probing depth between the two methods. It is concluded that the Auger electron probes 10-100Å depth and the sample current probes 1-10Å depth when the incident x-rays are totally reflected. On the other hand, x-ray induced current intensity of a Si wafer is measured as a function of incident photon energy in and out of the total reflection condition, and by this way, x-ray absorption fine structure (XAFS) spectra are obtained. It is found that the XAFS measured using the sample current is more surface sensitive (-5Å) than the Auger electron yield (-50Å) when the incident x-rays are totally reflected.
- 日本学士院の論文
著者
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Kawai Jun
Department Of Cardiovascular Surgery Kinki University School Of Medicine
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KITAJIMA Yoshinori
Photon Factory, National Laboratory for High Energy Physics
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Hayakawa Shinjiro
Department Of Applied Chemistry Graduate School Of Engineering Hiroshima University
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TAKAMI Michio
The Institute of Physical and Chemical Research
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MAEDA Kuniko
The Institute of Physical and Chemical Research (RIKEN)
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URAI Teruo
The Institute of Physical and Chemical Research (RIKEN)
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Kitajima Yoshinori
Photon Factory High Energy Accelerator Research Organization
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Adachi Hirohiko
Department Of Chemistry Hyogo University Of Teacher Education
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Gohshi Yohichi
Department Of Applied Chemistry Faculty Of Engineering The University Of Tokyo
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KAWAI Jun
Department of Metallurgy, Kyoto University
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SUZUKI Setsuo
Department of Industrial Chemistry, University of Tokyo
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Kawai Jun
Department of Applied Physics, Tokyo Institute of Technology
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