Photothermal Beam Deflection (PBD) Image of Certain GaAs Wafers
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概要
- 論文の詳細を見る
The photothermal beam deflection (PBD) technique utilizes a change of refractive index of the gas surrounding a sample, and a thermoelastic deformation on the sample surface induced by the heat generated as a result of the light absorption. The elastic property of the sample has been measured nondestructively and without contact using PBD. This technique was applied for the first time to the inspection of a dislocation existing in a GaAs semiconductor wafer.
- 社団法人応用物理学会の論文
- 1985-12-20
著者
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Furuya Keiichi
Department Of Applied Chemistry Faculty Of Science Science University Of Tokyo
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Furuya Keiichi
Department Of Industiral Chemistry Faculty Of Engineering The University Of Tokyo
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WATANABE Tomoharu
Department of Industiral Chemistry, Faculty of Engineering, The University of Tokyo
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Sawada Tsuguo
Department F Industrial Chemistry Faculty Of Engineering The University Of Tokyo
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Gohshi Yohichi
Department Of Applied Chemistry School Of Engineering The University Of Tokyo
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Watanabe Takeo
Univ. Hyogo Hyogo Jpn
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Furuya K
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Gohshi Yohichi
Department Of Applied Chemistry Faculty Of Engineering The University Of Tokyo
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Watanabe Takayuki
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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