Conditions for OMVPE Growth of GaInAsP/InP Crystal
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概要
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The conditions required for the growth of GaInAsP/InP by organometallic vapor-phase epitaxy (OMVPE) covering the available bandgap wavelength of 1.3-1.6μm were obtained experimentally with a carefully-arranged experimental set-up. The precision required in controlling the gas flows and temperatures for lattice matching is discussed. The relations between alloy compositions and source gas flow ratios were investigated, as well as p-n junctions. Lasing operation at a wavelength of 1.58μm was achieved with GaInAsP/InP grown under these growth conditions.
- 社団法人応用物理学会の論文
- 1984-09-20
著者
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Furuya Keiichi
Department Of Industiral Chemistry Faculty Of Engineering The University Of Tokyo
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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Sugou Shigeo
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya K
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Kameyama Atsuhi
Department of Physical Electronics, Tokyo Institute of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Kameyama Atsuhi
Department Of Physical Electronics Tokyo Institute Of Technology
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