Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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SUHARA Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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OOBO Takashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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TAKEMURA Riichiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Suhara M
Tokyo Metropolitan Univ. Tokyo Jpn
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Oobo Takashi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Takemura Riichiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Furuya K
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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