Analysis of Excess Intensity Noise due to External Optical Feedback in DFB Semiconductor Lasers on the Basis of Mode Competition Theory
スポンサーリンク
概要
- 論文の詳細を見る
The generation mechanism for excess intensity noise due to optical feedback is analyzed theoretically and experimentally. Modal rate equations under the weakly coupled condition with external feedback are derived to include the mode competition phenomena in DFB and Fabry-Perot lasers. We found that the sensitivity of the external feedback strongly depends on design parameters of structure, such as the coupling constant of the corrugation, the facet reflection and the phase relation between the corrugation and the facet. A DFB laser whose oscillating wavelength is well adjusted to Bragg wavelength through insertion of a phase adjustment region becomes less sensitive to external optical feedback than a Fabry-Perot laser, but other types of DFB lasers revealing a stop band are more sensitive than the Fabry-Perot laser.
- 社団法人電子情報通信学会の論文
- 1993-06-25
著者
-
Yamada Minoru
Faculty of Health Sciences, Kobe University School of Medicine
-
Suhara M
Tokyo Metropolitan Univ. Tokyo Jpn
-
Yamada M
Kanazawa Univ. Kanazawa‐shi Jpn
-
Suhara Michihiko
Faculty of Technology, Kanazawa University
-
Yamada Minoru
Faculty Of Engineering Kanazawa University
-
Yamada Minoru
Faculty Of Technology Kanazawa University
関連論文
- Novel 1470-nm-Band WDM Transmission and Its Application to Ultra-Wide-Band WDM Transmission (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Novel 1470-nm-Band WDM Transmission and Its Application to Ultra-Wide-Band WDM Transmission (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Process Charactarization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Power and Area Minimization by Reorganizing CMOS Complex-Gates (Special Section of Selected Papers from the 8th Karuizawa Workshop on Circuits and Systems)
- Synergistic Power/Area Optimization with Transistor Sizing and Wire Length Minimization
- A Hierarchical Global Router for Macro-Block-Embedded Sea-of-Gates (Special Section on VLSI Design and CAD Algorithms)
- Ambulatory Physical Activity is Associated with Walking Speed in Adult Women with Hip Disorders
- Age- and Speed-Related Changes in Gait Parameters of Adult Women with Osteoarthritis of the Hip
- Theoretical Proposal of an Optical Detection System Using DFB Laser with a Very Small Aperture
- Temperature Dependence of Gain Characteristics in 1.3-μm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Dependence of Gain Characteristics in 1.3-μm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
- W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
- Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
- Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
- Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
- Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well
- Fabrication and Characterization of Novel Oxide-Free InP MISFETs Having an Ultra-Narrow Si Surface Quantum Well
- Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
- A 25-nm-pitch GaInAs/InP Buried Structure Using Calixarene Resist
- Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
- Current-Voltage Characteristics of Triple-Barrier Resonant Tunnnel Diodes Including Coherent and Incoherent Tunneling Processes (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE
- Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
- 111-MHz 1-Mbit CMOS Synchronous Burst SRAM Using a Clock Activation Control Method (Special Issue on ULSI Memory Technology)
- Evaluation of Hot Electron Coherent Length Using Well Width Dependence of the Resonance Characteristics of Resonant Tunneling Diodes
- Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes
- A 4-Mb SRAM Using a New Hierarchical Bit Line Organization Utilizing a T-Shaped Bit Line for a Small Sized Die (Special Issue on ULSI Memory Technology)
- Possibility of High-Temperature Evaluation of Phase Coherent Length of Hot Electrons in Triple-Barrier Resonant Tunneling Diodes
- Analysis of Excess Intensity Noise due to External Optical Feedback in DFB Semiconductor Lasers on the Basis of Mode Competition Theory
- Experimental Characterization of the Feedback Induced Noise in Self-Pulsing Lasers
- NEW OBSERVATIONS ON THE LIPIDS OF AQUATIC ORIGIN
- A Theoretical Analysis of Quantum Noise in Semiconductor Lasers Operating with Self-Sustained Pulsation
- Thin Film Formation by Direct Reverse Roll-Coating on Plastic Web