Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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SUHARA Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TAKEMURA Riichiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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HONJI Hidetaka
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Suhara M
Tokyo Metropolitan Univ. Tokyo Jpn
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Honji Hidetaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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NAGAO Chuma
Department of Electrical and Electric Engineering, Tokyo Institute of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Nagao Chuma
Department Of Electrical And Electric Engineering Tokyo Institute Of Technology
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Takemura Riichiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Furuya K
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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- Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
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