Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment
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概要
- 論文の詳細を見る
It is shown that the combined surface treatment of a (NH_4)_2S_x treatment and preheating improves the regrown heterointerface of n-GaInAs/i-InP in organometallic vapor phase epitaxy (OMVPE). Properties or the regrown heterointerface were evaluated from voltage-current (V-I) characteristics of the n-GaInAs/i-InP/n-GaInAs tunneling diode. This surface treatment is useful for the fabrication of ultrafine-size structures of quantum-wire, -box and electron wave devices.
- 社団法人応用物理学会の論文
- 1991-10-01
著者
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Suemasu Takashi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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