InP/InGaAs Hot Electron Transistors with Insulated Gate

スポンサーリンク

概要

• 論文の詳細を見る

• Elimination of the base layer in conventional hot electron transistor has possibility to minimize the scattering in the propagation. In previous study, we fabricated InP/InGaAs hot electron transistors without a doped layer in the propagation region by fabricating a 25-nm-wide emitter and Schottky gate electrodes located at both sides of an emitter mesa. However, there were some problems in fabricated device. To solve these observed problems, we proposed and fabricated a new structure with hot electrons propagating only in the intrinsic semiconductor. An insulated gate was introduced in hot electron transistors, in which hot electrons are propagated only in the intrinsic region after extraction from a heterostructure launcher. Clear collector current modulation by the insulated gate and a current density of 160 kA/cm2 were confirmed.

• Japan Society of Applied Physicsの論文
• 2007-07-25

著者

• 齋藤 尚史

  東京工業大学

• Saito Hisashi

  Department Of Physical Electronics Tokyo Institute Of Technology

• Suwa Akira

  Department Of Internal Medicine And Pathology School Of Medicine Keio University

• Furuya Kazuhito

  Department Of Electrical And Electronic Engineering

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering

• Hasegawa Takashi

  Department Of Biology Division Of Natural Science International Christian University

• Saito Hisashi

  Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan

• Hino Takahiro

  Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan

• Oono Masaya

  Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan

• Hasegawa Takashi

  Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan

• SAITO Hisashi

  Department of Internal Medicine, Kido Hospital

関連論文

• Al2O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET (電子デバイス)
• III-V族サブミクロンチャネルを有する高移動度MOSFET
• SiO_2細線埋込InP系HBTにおけるCBr_4を使ったin-situエッチング(半導体のプロセス・デバイス(表面,界面,信頼性),一般)
• Al_2O_3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET(化合物半導体デバイス及び超高周波デバイス/一般)
• Al_2O_3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET(化合物半導体デバイス及び超高周波デバイス/一般)
• ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFETの作製
• Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
• Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
• Proposal for a Solid State Biprism Device
• A case of late-onset polymyositis with autoantibodies to the signal recognition particle
• Pneumocystis jiroveci pneumonia associated with low-dose methotrexate treatment for rheumatoid arthritis : report of two cases and review of the literature
• Sensorimotor polyneuropathy as an initial clinical manifestation of sarcoidosis
• Fabrication of Ultrafine X-Ray Mask Using Precise Crystal Growth Technique
• 絶縁ゲートにより制御するホットエレクトロントランジスタの走行層幅微細化
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Light Emission from Quantum-Box Structure by Current Injection
• High-Quality n-GaInAs Grown by OMVPE Using Si_2H_6 by High-Velocity Flow
• Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
• Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode
• Phase-Breaking Effect Appearing in the Current-Voltage Characteristics of Double-Barrier Resonant Tunneling Diodes - Theoretical Fitting Over Four Orders of Magnitude -
• Phase Breaking Effect Appearing in I-V Characteristics of Double-Barrier Resonant-Tunneling Diodes : Theoretical Fitting Over Four Orders of Magnitude
• Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
• W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
• Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
• Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices
• Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
• Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
• Theoretical Gain of Quantum-Well Wire Lasers
• Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
• Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
• Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
• First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
• Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
• Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
• High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE
• Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
• Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs
• Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
• 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
• 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
• Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain
• Crystal Growth of InP on a Gd_3Ga_5O_ Substrate by Organometallic Chemical Vapor Deposition
• High Mobility Group Proteins 1 and 3 Can Function as DNA-Binding Rrgulatory Components for DNA-Dependent Protein Kinase In Vitro Regulatory Components for DNA-Dependent Protein Kinase In Vitro
• Theoretical Relation between Spatial Resolution and Efficiency of Detection in Scanning Hot Electron Microscope
• Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
• Design and Experimental Characteristics of n-St/CaF_2/Au Hot Electron Emitter for Use in Scanning Hot Electron Microscopy
• Comparison between Fermi-Dirac and Boltzmann Methods for Band-bending Calculations of Si/CaF_2/Au Hot Electron Emitter
• Characteristics and Reduction of Noise in Scanning Hot Electron Microscopy
• A 73-year-old man with confusion, fever, and positive MPO-ANCA
• Hematopoietic stem cell transplantation for the treatment of autoimmune diseases
• GaInAs/InP Hot Electron Transistors Grown by OMVPE
• Evaluation of Hot Electron Coherent Length Using Well Width Dependence of the Resonance Characteristics of Resonant Tunneling Diodes
• Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes
• GaInAsP/InP Single Quantum-Well Lasers by OMVPE
• Conditions for OMVPE Growth of GaInAsP/InP Crystal
• Vertical InGaAs Channel Metal--Insulator--Semiconductor Field Effect Transistor with High Current Density
• Current Peak Characteristics of Triple-Barrier Resonant-Tanneling Diodes with and without Phase Breaking : Semiconductors
• Al_2O_3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET
• Al_2O_3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET
• Possibility of High-Temperature Evaluation of Phase Coherent Length of Hot Electrons in Triple-Barrier Resonant Tunneling Diodes
• Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
• Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
• Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
• Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
• Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer
• 縦型InGaAs MIS-FETのソース寄生容量の削減
• InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm
• Wet Chemical Etching for Ultrafine Periodic Structure : Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth : Etching and Deposition Technology
• Analysis of Phase Breaking Effect in Resonant Tunneling Diodes Using Correlation Function
• Coherent Hot-Electron Emitter
• Observation of InP Surfaces after (NH_4)_2S_x Treatment by a Scanning Tunneling Microscope
• Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs(Semiconductor Materials and Devices)
• Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes
• Analysis of Phase-Breaking Effects in Triple-Barrier Resonant-Tunneling Diodes
• C-10-12 GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETの作製・評価(C-10.電子デバイス,一般セッション)
• High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes
• Theoretical Study of Resonant Tunneling Diodes with Impurity Ions Located in Wells
• Wavefront Spread of Hot Electrons Generated by Planer Tunnel Emitters
• Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment
• Coherent Electron Devices
• InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
• Reduction of Output Conductance in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region
• Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
• Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz
• InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
• Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO_2 Wires
• DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology
• Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias
• Proposal of a Technique to Detect Subsurface Hot Electrons with a Scanning Probe Microscope
• InP Hot Electron Transistors with a Buried Metal Gate
• Fabrication of GaInAs/InP Heterojunction Bipolar Transistors with a Single Tungsten Wire as Collector Electrode
• InP/InGaAs Hot Electron Transistors with Insulated Gate
• Design and Simulation of Hot-Electron Diffraction Observation Using Scanning Probe: Quantitative Evaluation of Observation Possibility
• Estimation of Lateral Resolution in Scanning Hot Electron Microscopy
• Wet Chemical Etching for Ultrafine Periodic Structure: Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth
• Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain
• Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
• Transient Response of the Aharonov-Bohm Effect

もっと見る 閉じる

スポンサーリンク