Analysis of Phase-Breaking Effects in Triple-Barrier Resonant-Tunneling Diodes
スポンサーリンク
概要
- 論文の詳細を見る
We analyze phase-breaking effects in triple-barrier resonant-tunneling diodes (TBRTDs) for estimations of hot-electron phase coherence. The method employed is the nonequilibrium Green's function (NEGF) formalism with a simple phase-breaking model. The NEGF formalism is found to improve a previously reported analysis for TBRTDs with respect to magnitudes of current densities. By comparing results of the present analysis with the experimental data, it is shown that the phase relaxation time is longer than 0.2 ps in GaInAs/InP TBRTD at the resonance level of 50 meV above the first well bottom and 100 meV above the second well bottom and at 4.2 K.
- 社団法人応用物理学会の論文
- 1999-07-15
著者
-
Machida Nobuya
Department Of Chemistry Konan University
-
Furuya Kazuhito
Department Of Electrical And Electronic Engineering
-
Machida Nobuya
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
関連論文
- Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Proposal for a Solid State Biprism Device
- Fabrication of Ultrafine X-Ray Mask Using Precise Crystal Growth Technique
- Light Emission from Quantum-Box Structure by Current Injection
- High-Quality n-GaInAs Grown by OMVPE Using Si_2H_6 by High-Velocity Flow
- Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
- Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode
- Phase-Breaking Effect Appearing in the Current-Voltage Characteristics of Double-Barrier Resonant Tunneling Diodes - Theoretical Fitting Over Four Orders of Magnitude -
- Phase Breaking Effect Appearing in I-V Characteristics of Double-Barrier Resonant-Tunneling Diodes : Theoretical Fitting Over Four Orders of Magnitude
- Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
- W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
- Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
- Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices
- Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
- Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
- X-Ray Diffraction and Mossbauer Spectroscopic Studies of FePS_3-Alkylamines Intercalation Compounds
- Isothermal Tetragonal to Monoclinic Phase Transition around Room Temperature in 2.0mol% Yittria-doped Zirconia Ceramics
- Mixed Anion Effect on Conductivity of the Glasses in the System AgI-Ag_2MoO_4-AgPO_3
- Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
- Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
- Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
- First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
- Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
- Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
- High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE
- Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
- Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs
- Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
- Theoretical Relation between Spatial Resolution and Efficiency of Detection in Scanning Hot Electron Microscope
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Design and Experimental Characteristics of n-St/CaF_2/Au Hot Electron Emitter for Use in Scanning Hot Electron Microscopy
- Comparison between Fermi-Dirac and Boltzmann Methods for Band-bending Calculations of Si/CaF_2/Au Hot Electron Emitter
- Characteristics and Reduction of Noise in Scanning Hot Electron Microscopy
- GaInAs/InP Hot Electron Transistors Grown by OMVPE
- Evaluation of Hot Electron Coherent Length Using Well Width Dependence of the Resonance Characteristics of Resonant Tunneling Diodes
- Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes
- GaInAsP/InP Single Quantum-Well Lasers by OMVPE
- Conditions for OMVPE Growth of GaInAsP/InP Crystal
- Vertical InGaAs Channel Metal--Insulator--Semiconductor Field Effect Transistor with High Current Density
- Current Peak Characteristics of Triple-Barrier Resonant-Tanneling Diodes with and without Phase Breaking : Semiconductors
- Possibility of High-Temperature Evaluation of Phase Coherent Length of Hot Electrons in Triple-Barrier Resonant Tunneling Diodes
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Preparation of Amorphous Solid Electrolytes in The System Li_2S-Al_2S_3-P_2S_5 by High-energy Ball-milling Methods
- Wet Chemical Etching for Ultrafine Periodic Structure : Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth : Etching and Deposition Technology
- Mechano-Chemical Synthesis of Silver Ion Conducting Materials in the System Agl-Ag_2S-SiS_2
- Mechano-chemical Synthesis of RbAg_4I_5 and KAg_4I_5 Crystals and Their Silver Ion Conducting Properties
- Analysis of Phase Breaking Effect in Resonant Tunneling Diodes Using Correlation Function
- Coherent Hot-Electron Emitter
- A New Amorphous Lithium-ion Conductor in the System Li_2S-P_2S_3
- Preparation of YBa2Cu3Ox by Vacuum Calcination and Subsequent Oxidation Method
- Observation of InP Surfaces after (NH_4)_2S_x Treatment by a Scanning Tunneling Microscope
- Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes
- Mechano-chemical Synthesis of Lithium Ion Conducting Materials in the System Li_2O-Li_2S-P_2S_5
- An All-solid-state Lithium Battery with Sulfur as Positive Electrode Materials
- Analysis of Phase-Breaking Effects in Triple-Barrier Resonant-Tunneling Diodes
- 受賞記念講演 Development of Materials for All-solid-state Lithium Batteries (特集 電池材料--SOFC(固体酸化物燃料電池)と二次電池材料)
- High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes
- Theoretical Study of Resonant Tunneling Diodes with Impurity Ions Located in Wells
- Wavefront Spread of Hot Electrons Generated by Planer Tunnel Emitters
- Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment
- Coherent Electron Devices
- InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
- Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias
- Proposal of a Technique to Detect Subsurface Hot Electrons with a Scanning Probe Microscope
- InP Hot Electron Transistors with a Buried Metal Gate
- Fabrication of GaInAs/InP Heterojunction Bipolar Transistors with a Single Tungsten Wire as Collector Electrode
- InP/InGaAs Hot Electron Transistors with Insulated Gate
- Design and Simulation of Hot-Electron Diffraction Observation Using Scanning Probe: Quantitative Evaluation of Observation Possibility
- Estimation of Lateral Resolution in Scanning Hot Electron Microscopy
- Wet Chemical Etching for Ultrafine Periodic Structure: Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth
- Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Transient Response of the Aharonov-Bohm Effect