Proposal of a Technique to Detect Subsurface Hot Electrons with a Scanning Probe Microscope
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概要
- 論文の詳細を見る
In this paper we introduce a new experimental technique called scanning hot electron microscopy (SHEM), which allows detection of hot electrons emitted from sub-surface semiconductor structures. The principle of operation is basically the same as that of a reverse biased ballistic-electron-emitting microscope (BEEM), but with several additional modifications necessary to ensure that the current of hot electrons flowing from the sample to the probe exceeds that of thermalized electrons. In particular, hot electrons are required to surmount the gap barrier rather than tunnel through it. The possibility of SHEM operation is theoretically demonstrated for several material combinations of the probe and the sample, and a suitable experimental setup is proposed. Once this technique is fully implemented, it will allow for the study of electron wave phenomena in subsurface semiconductor structures.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
-
Furuya Kazuhito
Department Of Electrical And Electronic Engineering
-
Kobayashi Daisuke
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
-
Vazquez Francisco
Department of Electronics and Electrical Engineering, Tokyo Institute of Technology,
-
Furuya Kazuhito
Department of Electronics and Electrical Engineering, Tokyo Institute of Technology,
-
Kobayashi Daisuke
Department of Electronics and Electrical Engineering, Tokyo Institute of Technology,
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