Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
スポンサーリンク
概要
- 論文の詳細を見る
- 1997-09-16
著者
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SATO Ken
Department of Dermatology, Iwate Medical University School of Medicine
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SATO Kuninori
National Institute for Fusion Science
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Sato K
Asahi Glass Co. Ltd. Yokohama Jpn
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Sato K
Depertment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Sato K
Faculty Of Applied Biological Science Hiroshima University
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Sato K
National Institute For Fusion Science
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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SUHARA Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Sato Kuninori
Institute For Fusion Science
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Sato K
National Defense Acad. Yokosuka Jpn
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Sato K
Faculty Of Technology Tokyo Universily Of Agriculture And Technology
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Sasaki K
Nagoya Univ. Nagoya Jpn
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Sato K
Dept. Of Energy Engineering And Science Nagoya University
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HONJI Hidetaka
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NAKAMURA Hifumi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Suhara M
Tokyo Metropolitan Univ. Tokyo Jpn
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Honji Hidetaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Nakamura Hifumi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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SATO Kazuo
Faculty of Education, Tokusima University
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Furuya K
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Sato Ken
Department Of Applied Physics Tokyo University Of Agriculture And Technology
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