High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

• 論文の詳細を見る

• This paper describes the high-performance and reliability of scaled InP/InGaAs HBTs with a passivation ledge structure and a refractory tungsten (W)-based emitter contact metal. The ledge structure is effective in suppressing surface recombination currents at the emitter-mesa periphery, and the W emitter contact metal is advantageous for prevention of emitter electrode metal migration. We compare the dc and high-frequency characteristics of four InP/InGaAs HBTs with different n-doping levels in the InP emitter layer (n_E) for the purpose of optimizing the emitter design both for performance and reliability. The InP-HBT with relatively high n_E shows a reasonable current gain (β) of 50 and an excellent unity gain cutoff frequency (ft) of 270 GHz. Additionally, accelerated life tests for this InP-HBT reveal no rapid decrease in β up to 100 hours in spite of a collector current density (J_c) as high as 5mA/μm^2 at the ambient temperature of 195℃.

• 社団法人電子情報通信学会の論文
• 2007-06-18

著者

• Yamahata Shoji

  Ntt Photonics Laboratories

• Yamahata Shoji

  Ntt Corp. Atsugi‐shi Jpn

• MIYAMOTO Yasuyuki

  Department of Physical Electronics, Tokyo Institute of Technology

• KURISHIMA Kenji

  NTT Photonics Laboratories, NTT Corporation

• KASHIO Norihide

  NTT Photonics Laboratories, NTT Corporation

• FUKAI YoshinoYoshino

  NTT Photonics Laboratories, NTT Corporation

• Fukai Yoshinoyoshino

  Ntt Photonics Laboratories Ntt Corporation

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Kurishima Kenji

  Ntt Photonics Laboratories Ntt Corporation

• Kashio Norihide

  Ntt Photonics Laboratories Ntt Corporation

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering

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